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16.05.06
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제목 : Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process

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Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process


Non-volatile resistive memory (memristor) has received considerable attention because of its non-volatility, faster access speed, ultra-high density and easy fabrication process. It is regarded as one of the most attractive candidates to meet the trend of aggressively reduced feature size of electronic devices as predicted by Moore’s law in the next a few decades. One-dimensional (1D) nanowires (NWs) are one possibility that would allow researchers to fully exploit the scaling potential of high density memory arrays. Several research groups have investigated the feasibility of applying NWs to memristors. However, scalable fabrication of NW array with alignment is still a difficult challenge.


This work provides a new fabrication approach, named as inorganic-nanowire digital-alignment technique (INDAT). INDAT is a rapid and simple printing technology that succeeds in printing Cu NWs with various shapes, such as parallel lines with adjustable pitch, grids and waves. Through one-step selective reduction process, the grids are converted memristor array with cross-bar-shaped conductive Cu nanowires jointed with a nanometer-scale CuxO layer. The devices exhibited excellent electrical performance with reproducible resistive switching behavior. This work can offer a future stretchable memory for integration into textile to serve as a basic building block for smart fabrics and wearable electronics.


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