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16.05.04
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제목 : Perovskites tapped for flexible nonvolatile memory

Perovskites, it turns out, show current-voltage hysteresis because of the same crystal defects that cause headaches in solar cell applications. “Defects are not good for solar cells, but they are essential in our memory devices,” says Jang-Sik Lee, a materials scientist and engineer at Pohang University of Science & Technology.

Lee and colleague Chungwan Gu deposited a thin film of the perovskite methylammonium lead triiodide on a flexible plastic substrate coated with a transparent indium tin oxide electrode. They deposited gold electrodes on top of the perovskite. This forms a basic resistive memory device, Lee says. Applying a positive voltage (1 V) sets the device to a low resistance ”on” state, and applying an equivalent negative voltage resets it to a high resistance ”off” state.

The researchers measured the two resistance states for more than 2.5 hours and found no degradation in the device’s ability to switch between states, meaning the device could hold information for at least that long. They now plan to test the devices for several weeks.

Given how easy and cheap it is to make perovskites, “these flexible devices could be used in low-cost stretchable and wearable electronics of the future,” Lee says.


http://cen.acs.org/articles/94/web/2016/05/Perovskites-tapped-flexible-nonvolatile-memory.html
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