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69 H. Oh, J. Kim, J. Lee, T. Rim, C. –K. Baek, and J. –S. Lee, “Effects of single grain boundary and random interface traps on electrical variations of sub-30nm polysilicon nanowire structures”, Microelectronic Engineering, vol. 149, no. 5, pp. 113, Jan. 2016 
68 K. Kim, C. Park, D. Kwon, D. Kim, M. Meyyappan, S. Jeon, and J. –S. Lee, “Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity”, Biosensors and Bioelectronics, vol. 77, pp. 695, Mar. 2016 
67 J. Kim, H. Oh, J. Lee, C.-K. Baek, M. Meyyappan, and J.-S. Lee, “Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40nm polysilicon nanowire FETs”, Semiconductor Science and Technology, vol. 30, no. 
66 J. H. Hong, S. H. Lee, Y. R. Kim, E. Y. Jeong, J. S. Yoon, J. –S. Lee, R. H. Baek, and Y. H. Jeong, “Impact of the spacer dielectric constant on parasitic RC and design guidelines to optimize DC/AC performance in 10-nm-node Si-nanowire FETs”, Japanese Jour 
65 J. S. Yoon, E. Y. Jeong, S. H. Lee, Y. R. Kim, J. H. Hong, J. –S. Lee, and Y. H. Jeong, “Extraction of source/drain resistivity parameters optimized for double-gate FinFETs”, Japanese Journal of Applied Physics, vol. 54, no. 4S, pp. 04DC06-1, Jan. 2015 
64 E. Y. Jeong, M. J. Deen, C. H. Chen, R. H. Baek, J. –S. Lee, and Y. H. Jeong, “Physical DC and thermal noise models of 18 nm double-gate junctionless p-type MOSFETs for low noise RF applications”, Japanese Journal of Applied Physics, vol. 54, no. 4S, pp. 0 
63 E. Y. Jeong, J. S. Yoon, C. –K. Baek, Y. R. Kim, J. H. Hong, J. –S. Lee, R. H. Baek, and Y. H. Jeong, “Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic Applications”, IEEE Transactions on Electron De 
62 J. S. Yoon, E. Y. Jeong, C. –K. Baek, Y. R. Kim, J. H. Hong, J. –S. Lee, R. H. Baek, and Y. H. Jeong, “Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm Node”, IEEE Electron Device Letters, vol. 36, no. 10, pp. 9 
61 D. Kang, T. Rim, C.-K. Baek, M. Meyyappan and J.-S. Lee, “Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors”, Small, vol. 10, no.18, 2014. 
60 K. Kim, T. Rim, C. Park, D. Kim, M. Meyyappan and J. S. Lee, 'Suspended honeycomb nanowire ISFETs for improved stiction-free performance', IOP Nanotechnology, vol.25 no.24, 2014