NDDL






















 

 

 

 

 

2017

295. J. Y. Park, I. Lee, J. Ham, S. Gim, and J. -L. Lee, "Simple and scalable growth of AgCl nanorods by plasma-assisted strain relaxation on flexible polymer substrates", Nature Communications, 8, 15650 (2017) [link]

294. W. J. Dong, Y. J. Song, G. H. Jung, K. Kim, S. Kim, and J. -L. Lee, "Monolithic photo-assisted water splitting device using anodized Ni-Fe oxygen evolution catalytic substrate", Advanced Energy Materials, accepted (2017) [link]


293. S. Kim, W. J. Dong, S. Gim, W. Sohn, J. Y. Park, C. J. Yoo, H. W. Jang, J. -L. Lee, "Shape-controlled bismuth nanoflakes as highly selective catalysts for electrochemical carbon dioxide reduction to formate", Nano Energy, 39, 44-52 (2017) [link]

292. S. Gim, I. Lee, J. Y. Park, J. -L. Lee, "Spontaneously embedded scattering structures in the flexible substrate for light extraction", Small, 13, 1604168 (2017) [link]

291. G. Shin, A. M. Gomez, R. A-H, Y. R. Jeong, J. Kim, Z. Xie, A. Banks, S. M. Lee, S. Y. Han, C. J. Yoo, J. -L. Lee, S. H. Lee, J. Kurniawan, J. Tureb. Z. Guo, J. Yoon, S. -I. Park, S. Y. Bang, Y. Nam, M. C. Walicki, V. K. Samineni, A. D. Mickle, K. Lee, S. Y. Heo, J. G. McCall, T. Pan, L. Wang, X. Feng, T. Kim, J. K. Kim, Y. Li, Y. Huang, R. W. Gereau, J. S. Ha, M. R. Brunchas, and J. A. Rogers, "Flexible Near-Field Wireless Optoelectronics as Subdermal Implants for Broad Applications in Optogenetics", Neuron, Vol. 93, 509-521 (2017) [link]

290. I. Lee, S. Gim, J. Y. Park, S. Kim, J. -L. Lee, "One-structure-based barrier film for simultaneous exclusion of water and ultra-violet light", Advanced Optical Materials, 5, 3, 1600888 (2017) [link]



289. K. R. Jeong, I. Lee, J. Y. Park, C. S. Choi, S.-H. Cho, and J. -L. Lee, "Enhanced black state induced by spatial silver nano-particles in electrochromic device", NPG Asia materials, 9, e362 (2017) [link]



2016

 


288. W. J. Dong, J. Ham, K. Kim, S. Kim, G. H. Jung, S. Gim, and J. -L. Lee, "Simple Bar-Coating Process for Fabrication of Flexible Top-Illuminated Polymer Solar Cells on Metallic Substrate", Advanced Materials Technologies, Vol. 1, 1600128 (2016) [link]



287. K. Hong, M. -G. Kim, H. M. Yang, D. C. Lim, J. Y. Lee, S. J. Kim, I. Lee, K. H. Lee, and J. -L. Lee, "Solid-State Dual Function Electrochemical Devices: Energy Storage and Light Emitting Applications", Advanced Energy Materials, Vol. 6, 1600651 (2016) [link]



286. S. Kim, K. C. Kwon, J. Y. Park, H. W. Cho, I. Lee, S. Y. Kim, and J. -L. Lee, "Challenge beyond Graphene: Metal oxide/graphene/metal oxide electrodes for optoelectronic devices", ACS Applied Materials & Interfaces, Vol. 8, No. 20, 12932-12939 (2016) [link]



285. W. J. Dong, J. Y. Park, J. Ham, G. H. Jung, I. Lee, and J. -L. Lee, "Dual effect of ITO-interlayer on inverted top-illuminated polymer solar cells: wetting of polyelectrolyte and tuning cavity", Advanced Functional Materials, Vol. 26, 5473-5446 (2016) [link]



284. W. J. Dong, N. -T. Lo, G. H. Jung, J. Ham, and J. -L. Lee "Efficiency enhancement and angle-dependent color change in see-through organic photovoltaics using distributed Bragg reflectors", Applied Physics Letters, Vol. 108, 103902 (2016) [link]



283. H. K. Yu, and J. -L. Lee, "Understanding of preferred orientation formation in rock-salt materials: the case of MgO", Crystal Growth & Design, Vol. 16, No. 4, 1978-1983 (2016) [link]





282. I. Lee, J. Y. Park, K. Hong, J. H. Son, S. Kim, and J. -L. Lee, "The effect of localized surface plasmon resonance on the emission color change in organic light emitting diodes", Nanoscale, Vol. 8, 6463-6467 (2016) [link]

 

 

281. W. J. Dong, J. Ham, G. H. Jung, J. H. Son, and J.-L. Lee, "Ultrafast laser-assisted synthesis of hydrogenated molybdenum oxides for flexible organic solar cells", Journal of Materials Chemistry A, Vol. 4, 4755-4762 (2016) [link]

 

 

280. J. Ham, J. Y. Park, W. J. Dong, G. H. Jung, H. K. Yu, and J. -L. Lee, "Antireflective Indium-Tin-Oxide Nanobranches for Efficient Organic Solar Cells", Applied Physics Letters, Vol. 108, 073903 (2016) [link]



279. J. Ham, W. J. Dong, G. H. Jung, and J. -L. Lee, "Wavelength-scale structures as extremely high haze films for efficient polymer solar cells", ACS Applied Materials & Interfaces, Vol. 8, No. 9, 5990-5997 (2016) [link]

 

 

278. I. Lee, J. Y. Park, S. Gim, K. Kim, S.-H. Cho, C. S. Choi, S.-Y. Song, J.-L. Lee, "Optical Enhancement in Optoelectronic Devices using Refractive Index Grading Layers", ACS Applied Materials & Interfaces, Vol. 8, No. 5, 3326-3332 (2016) [link]

 

 

277. D. Zhao, I. lee, J. Y. Park, S.-H. Cho, C. S. Choi, S.-Y. Song, J. K. Kim, J.-L. Lee, "Haze-Free Highly Transparent Glass Substrates with Nanostructured Surface by Using Self-Assmbled Ag Etch Masks", ECS Journal of Solid State Science and Technology, Vol. 5, No. 2, R6-R11 (2016) [link]

 


 

2015

 

276. J. -H. Kim, B. U. Ye, J. Park, C. J. Yoo, B. J. Kim, H. Y. Jeong, J. -H. Hur, J. K. Kim, J. -L. Lee, and J. M. Baik, "Visible color tunable emission in three-dimensional light emitting diodes by MgO passivation of pyramid Tip", ACS Applied Materials & Interfaces, Vol. 7, No. 50, 27743-27748 [link]



275. K. Hong, J. Ham, B.-J. Kim, J. Y. Park, D. C. Lim, J. Y. Lee, and J.-L. Lee, "Continuous 1D-Metallic Microfibers Web for Flexible Orgnanic Solar Cells", ACS Applied Materials & Interfaces, Vol. 7, No. 49, 27397-27404 (2015) [link]

 

 

274. K. C. Kwon, C. Kim, Q. V. Le, S. Gim, J. Ham, J.-M. Jeon, J.-L. Lee, H. W. Jang, and S. Y. Kim, "Synthesis of atomically thin transition metal disulfides for charge transport layers in optoelectronic devices", ACS Nano, Vol. 9, No. 4, 4146-4155 (2015) [link]


273. I. Lee, J. Y. Park, S. Gim, and J.-L. Lee, "Spontaneously formed nano patterns on polymer film for flexible organic-light emitting diodes", Small, Vol. 11, No. 35, 4480-4484 (2015) [link]

272. J. Ham, W. J. Dong, J. Y. Park, C. J. Yoo, I. Lee, and J.-L. Lee, "A Challenge Beyond Bottom Cells: Top-Illuminated Flexible Organic Solar Cells with Nanostructured Dielectric/Metal/Polymer (DMP) films", Advanced Materials, Vol. 27, 4027-4033 (2015) [link]

 
271. I. Lee and J. -L. Lee, "Transparent electrode of nanoscale metal film for optoelectronic device", Journal of Photonics for energy, Vol. 5, 057609 (2015) [link]

 

 

270. W.J. Dong, C. J. Yoo, H. W. Cho, K. B. Kim, M. Kim and J.-L. Lee, "Flexible a-Si:H Solar Cells with Spontaneously Formed Parabolic Nanostructures on a Hexagonal-Pyramid Reflector", Small, Vol. 11, No.16, 1947- 1953 (2015) [link] 

  

 

 

2014

 

 

269. H. K. Yu and J.-L. Lee, "Growth mechanism of metal-oxide nanowires synthesized by electron beam evaporation: A self-catalyttic vapor-liquid-solid process", Scientific Reports, Vol4. 6589(2014) [link]

 

 

268. K. C. Kwon, S. Kim, J.-L. Lee, and S. Y. Kim, "Fluoropolymer-assited graphene electrode for organic light-emitting diodes", Organic Electronics, Vol. 15, 3154-3161 (2014) [link]

 

 

267. K.-G. Lim, M.-R Choi, J.-H. Kim, D. H. Kim, G. H. Jung, Y. Park, J.-L. Lee, T. Lee, "Role of ultrathin metal fluoride layer in organic photovoltaic cells: Mechanism of efficiency and lifetime enhancement", ChemSusChem, vol. 7, 1125-1132 (2014) [link]

 

 

266. H. K. Yu and J.-L. Lee, "Effect of ion beam assisted deposition on the growth of indium tin oxide (ITO) nanowires", CrystEngComm, Vol. 16, 4108-4112 (2014) [link]

 

 

265. H. K. Yu., K.Balasubramanian, K. Kim, J.-L. Lee, M. Maiti, C. Ropers, J. Krieg, K. Kern., and A. Wodtke, "Chemical Vapor Deposition of Graphene on a "Peeled-Off" Epitaxial Cu (111) Foil: A simple Approach to Improved Properties, ACS Nano, Vol. 8, No. 8, 8636-8643 (2014) [link]

 

 

264. S. Kim, H. W. Cho, K. Hong, J. H. Son, K. Kim, B. Koo, S. Kim, and J.-L. Lee, "Design of red, green, blue transparent electrodes for flexible optical devices", Optics Express, Vol. 4, No. 8, pp1257-1269 (2014) [link]

 

 

263. S. Kim, K. Hong, K. Kim, I. Lee nd J.-L. Lee,"Simple formation method of vanadium oxide films with gap states for application in organic optoelectrocnics", Organic electronics, Vol. 15, 2038-2042 (2014) [link]

 

262. K. Kim, S. Y. Kim and J. L. Lee, “Flexible organic light-emitting diodes using a laser lift-off method”, Journal of Materials chemistry C, Vol2, No. 12, pp2144-2149 (2014) [link]

 

261. B. U. Ye, B. J. Kim, J. Park, H. Y. Jeong, J. Y. Park, J. K. Kim, J. H. Hur, M. H. Kim. J. L. Lee and J. M. Baik, “Three-dimensional branched nanowire heterostructures as efficient light-extraction layer in light-emitting diodes”, Advanced Functional Materials, Vol24, pp3384-3391 (2014) [link]

 

260.J. Ham, and J.-L. Lee*, ITO breakers: Highly transparent conducting polymer/metal/dielectric (P/M/D) films for organic solar cells, Advanced Energy Materials, 4, 15, 1400539 (2014) [link]

 

 

259. K. C. Kwon, J. Ham, S. Kim, J.-L. Lee*, and S. Y. Kim*, Eco-friendly graphene synthesis on Cu foil electroplated by reusing Cu etchants, Scientific Reports, vol. 4, p.4830 (2014) [link]

 

 

258. H. Kwon, J. Ham, D. Y. Kim, S. J. Oh, S. Lee, S. H. Oh, E. F. Schubert, K.-G. Lim, T.-W. Lee, S. Kim, J.-L. Lee and J. K. Kim, Three-dimensional nanostructured indium-tin-oxide electrodes for enhanced performance of bulk heterojunction organic solar cells, Advanced Energy Materials, vol. 4, p.1301566 (2014) [link]

 


257. K. C. Kwon, B. J. Kim, C. Kim, J. -L. Lee, and S. Y. Kim, "Comparison of metal chloride-doped graphene electrode fabrication processes for GaN-based light emitting diodes", RSC Advances, Vol. 4, 51215-51219 (2014) [link]

 


256. J. H. Son, Y. H. Song, B. J. Kim, and J. -L. Lee, "Effect of reflective p-type ohmic contact on thermal reliability of vertical InGaN/GaN LEDs", Electronic Materials Letters, Vol. 10, No. 6, pp. 1171-1174 (2014) [link] 

 

 

2013

 

255. K.C. Kwon, B.J. Kim, J-L Lee and S.Y. Kim, “Effect of anions in Au complexex on doping and degradation of graphene”,Journal of Materials Chemistry C , Vol.1 No.13, pp2463-2469 (2013)

 

254. Y.Park, D.W.Suh, K.S.Choi, J.S. Yoo, J.Y Ham, J-L. Lee, S.Y.Kim, “Enhanced efficiency of organic photovoltaic cells with Sr2SiO4:Eu2+ and SrGa2S4:Eu2+ phosphors”, Organic Electronics: physics, materials, applications Vol.14, No.4, pp1021-1026(2013)

 

253. K.S.Kim, K.H.Hong, B.H. Koo, I.H.Lee and J-L. Lee, “Transparency controllable silver-based electrode for flexible optoelectronics”, Applied Physics Letters, Vol.102, pp081118 (2013)

 

252. J.Y.Ham, S.J.Kim, G.H.Jung, W.J. Dong and J-L Lee, “Design of broadband transparent electrodes for flexible organic solar cells”, Journal of Materials Chemistry A, Vol.1 pp.3076-3082 (2013)

 

251. W. J. Dong, G. H. Jung, S. Y. Kim and J.-L. Lee, “Effect of Ultra-Violet-Ozone on ITO/P3HT Interface for PEDOT:PSS-free Polymer Solar Cells,” Solar Energy Materials and Solar Cells,Vol.109, pp240-245 (2013)

 

250. K. C. Kwon, B. J. Kim, J.-L. Lee, and S. Y. Kim, “Role of ionic chlorine in the thermal degradation of metal chloride-doped graphene sheets,” Journal of Materials Chemistry A. Vol.1, pp253-259(2013).

 

249. K. C. Kwon, W. J. Dong, G. H. Jung, J. Y. Ham, J.-L. Lee, and S. Y. Kim, “Extension of stability in organic photovoltaic cells using UV/ozone-treated graphene sheets,” Solar Energy Materials and Solar Cells, Vol.109, pp148-154 (2013)

 

248. W.J. Park, M.H. Kim, B.H. Koo, W.J. Choi and J.-L. Lee, “Alternatively driven dual nanowire arrays by ZnO and CuO for selective sensing of gases”, Sensors and Actuators B: Chemical Vol.185, pp10-16 (2013)

 

247. S.J. Oh, G. Ko, J.-L. Lee, E.Fred Schubert, J. Cho and J.K. Kim,“Enhanced phosphor conversion efficiency of GaN based white light emitting diodes having dichroic filtering contacts”, Journal of Materials Chemistry C, Vol.1, No.36, pp.5733-5740 (2013)

 

246. B.H. Koo, S.J. Kim and J.-L. Lee, “Indium-tin-oxide free transparent electrodes using a plasmon frequency conversion layer”, Journal of Materials Chemistry C, Vol.1, No.2 pp.246-252 (2013)

 

245. G.H. Jung and J.-L. Lee, “Origin of gap states in the electron transport layer of organic solar cells”, Journal of Materials Chemistry A, Vol.1, No.9 pp.3034-3039 (2013)

 

244. W.J. Park, K.J. Choi, M.H. Kim, B.H. Koo, J.-L. Lee and J.M. Baik,“Self-assembled and highly selective sensors based on air bridge structured nanowire junction arrays”, ACS Applied Materials and Interfaces, Vol.5, No.15, pp.6802-6807 (2013)

 

243. W.J Dong, G.H. Jung and J.-L. Lee,“Solution-processed-MoO3 hole extraction layer on oxygen plasma-treated indium tin oxide in organic photovoltaics”, Solar Energy Materials and Solar Cells, Vol. 116, pp.94-101 (2013)

 

242. J.S. Yu, G.H Jung, J. Jo, J.S. Kim, J.W. Kim, S.W. Kwak, J.-L. Lee, I. Kim and D. Kim,“Transparent conductive film with printable embedded patterns for organic solar cells”, Solar Energy Materials and Solar Cells, Vol.109, pp.142-147 (2013)

 

 

2012

 

241. S. Kim, and J-L Lee, “Design of Dielectric/Metal/Dielectric Transparent Electrode for Flexible Electronics”,Journal of Photonics for Energy. Vol.2, No.1, pp021215 (2012)

 

240. K. C. Kwon, K.S.Choi, B.J. Kim, J.-L. Lee, and S. Y. Kim, “Work-Function Decrease of Graphene Sheet Using Alkali Metal Carbonates”, The Journal of Physical Chemistry C, Vol.116 No.50, pp26586-26591 (2012).

 

239. K. Hong, J. H. Son, S. Kim, B. H. Koo and J-L Lee, “Design rules for highly transparent electordes using dielectric constant matching of metal oxide with Ag film in optoelectronic devices”, Chem. Commun. Vol.48 (86), pp10606 - 10608. (2012).

 

238. H. K. Yu, S. Kim, B. Koo, G. H. Jung, B. Lee, J. Ham and J-L. Lee, “Nano-branched transparent conducting oxide: Beyond the brittleness limit for the flexible electrode applications”,Nanoscale,Vol.4,No. 21, pp.6831-6834. (2012).

 

237. K. Hong, J. H. Son, K. Kim, S. Kim, I. Lee and J-L. Lee, “Modulation of surface plasmon coupling for enhancement of optical transmittance of silver-coated alkaline-earth metal films,” Journal of Materials Chemistry, Vol.22,No.43,.pp.22859-22865 (2012).

 

236. K. Kim, K. Hong, I. Lee, S. Kim, and J-L. Lee, “Electron injection in magnesium-doped organic light emitting diodes”,Applied Physics Letters,Vol.101,No.14, pp.141102. (2012).

 

235. K. Kim, K. Hong, S. Kim and J. –L. Lee, “Doping Mechanism and Electronic Structure of Alkali Metal Doped Tris (8-hydroxyquinoline) Alunium”, The Journal of Physical Chemistry C,Vol.116,No.16. pp.9158-9165(2012).

 

234. J. Baik, B. Ye, B. Kim, Y. Song, J. Son, H. Yu, M. Kim, and J-L. Lee, “Enhancing Light Emission of Nanostructured Vertical Light-Emitting Diodes by Minimizing Total Internal Reflection”,Advanced Functional Materials, Vol 22, 632, pp.632-639(2012).

 

233. S. Kim, K. Hong, K. Kim, I. Lee and J. –L. Lee “Phase-controllable copper oxide for an efficient anode interfacial layer in organic light-emitting diodes”, Journal of Materials Chemistry, Vol 22, No.5, pp2039-2044  (2012).

 

232. J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. –L. Lee, “Design Rule of Nanostructures in Light-Emitting Diodes for Complete Elimination of Total Internal Reflection”,Advanced Materials,Vol.24, No.17, pp2259-2262. (2012).

 

231. J. H. Son, B. J. Kim, C. J. Ryu, Y. H. Song, H. K. Lee, J. W. Choi, and J. –L. Lee, “Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading”, Optics Express, vol. 20, No.S2. pp.A287-292 (2012).

 

230. K. Hong, and J. –L. Lee, “Charge Generation Mechanism of Metal Oxide Interconnection in Tandem Organic Light Emitting Diodes”, Journal of Physical Chemistry C, vol. 116,No.10 pp.6427-6433 (2012).

 

229. S. Kim, H. K. Yu, K. Hong, K. Kim, J. H. Son, I. Lee, K.-B. Kim, T.-Y. Kim, and J. –L. Lee, “MgO nano-facet embedded silver-based dielectric/metal/dielectric transparent electrode”, Optics Express, Vol. 20, No.2, pp.845-853 (2012)

 

2011

 

228. H. K. Yu, J. M. Baik, and J. -L. Lee, “Self-connected and habitually tilted piezoelectric nanorod array”, ACS nano, Vol. 5, No.11, pp.8828-8833 (2011).

 

227. G. H. Jung, K. Hong, W. J. Dong, S. Kim, and J. –L. Lee, “BCP/Ag/MoO3 transparent cathode for organic photovoltaic”, Adv. Energy Mater., Vol.1, No.6, pp.1023-1028 (2011).

 

226. H. K. Yu, W. J. Dong, G. H. Jung, and J. -L. Lee, “Three-Dimensional nano-branched indium-tin-oxide anode for organic solar cells”, ACS nano , Vol.5,No.10, pp. 8026-8032 (2011).

 

225. Y. Song, J. Son, B. Kim, H. Yu, C. Yoo, and J. –L. Lee, “Effects of W diffusion barrier on inhibition of AlN formation in Ti/W/Al ohmic contacts on N-face n-GaN”, Applied Physics Letters, Vol. 99, No.23, pp.233502 (2011).

 

224. S. Moon, J. Son, K. Choi, H. Jang, and J. –L. Lee, “Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes”, Applied Physics Letters, Vol. 99, No.20, pp. 202106 (2011).

 

223. H. K. Yu, W. -K. Kim, E. C. Park, J. S. Kim, B. -W. Koo, Y. -W. Kim, J. H. Ryu, and J. -L. Lee, “Enhanced secondary electron emission in nano-scale thin metal containing MgO film; Laser irradiation on creation of F centers”, Journal of Physical Chemistry C, Vol.115, No.36, pp.17910-1714 (2011).

 

222. Jun Ho Son, Hak Ki Yu, Yang Hee Song, Buem Joon Kim and Jong-Lam Lee, “Design of epitaxially strained Ag film for durable Ag-based contat to p-type GaN”, Crystal Growth and Design, Vol.11,No.11, pp.4943-4949 (2011).

 

221. K. Hong, K. Kim, S. Kim, S. Kim, and J.-L. Lee, “Metal diffusion induced interface dipole: Correlating metal oxide-organic chemical interaction and interface electronic states”, J. Phys. Chem. C., Vol.115, No.46, pp.23107-23112 (2011)

 

220. K. S. Choi, H. Jo, K. Park, S. Y. Kim, B. H. Koo, K. Hong, J.-L. Lee, "Effects of Functional Groups in Unsymmetrical Distyrylbiphenyl on the Performances of Blue Organic Light Emitting Diodes", Journal of Physical Chemistry C, Vol.115, No.19, pp.9767-9771 (2011)

 

219. H. K. Yu, J. M. Baik, and J. -L. Lee, “Design of an interfacial layer to block chemical reaction for epitaxial ZnO growth on Si substrate”, Crystal Growth & Design, Vol.11, No.6, pp.2438-2443 (2011).

 

218. B. -U. Ye, H. K. Yu, M. H. Kim, J. -L. Lee, and J. M. Baik, “Modulating ZnO nanostructure arrays on any substrates by nanolevel structure control”, Journal of Physical Chemistry C, Vol.115 No.16, pp.7987-7992 (2011).

 

217. K. S. Choi, Y. S. Park, K.-C. Kwon, J. Kim, C. K. Kim, S. Y. Kim, K. Hong, J.-L. Lee, " Reduced graphite oxide-indium tin oxide hybrid materials or use as a transparent electrode,”Journal of The Electrochemical Society, Vol.158, No.8, pp. J231-235 (2011).

 

216. Y. Lee, B. -U. Ye, H. K. Yu, J. -L. Lee, M. H. Kim, and J. M. Baik, “Facile synthesis of single crystalline metallic RuO2 nanowires and electromigration induced transport properties”,Journal of Physcial Chemistry C, Vol.115, No.11, pp.4611-4615 (2011).

 

215. Y. H. Song, J. H. Son, H. K. Yu, J. -H. Lee, G. H. Jung, J. Y. Lee, and J. -L. Lee, “Domain matching epitaxy of Mg-containing Ag contact on p-type GaN”, Crystal Growth & Design, Vol.11, No.6, pp. 2559-2563 (2011).

 

214. K. Hong, K. Kim, S. Kim, I. Lee, H. Cho, S. Yoo, H. W. Choi, N.-Y. Lee, Y.-H. Tak, and J.-L. Lee, “Optical properties of WO3/Ag/WO3 multilayer as transparent cathode in top-emitting organic light emitting diodes”, Journal of Physcial Chemistry C, Vol.115 No.8, pp.3453-3459 (2011).

 

213. G. H. Jung, K. –G. Lim, T. –W. Lee, and J. –L. Lee, “Morphological and electrical effect of an ultrathin iridium oxide hole extraction layer on P3HT:PCBM bulk-heterojunction solar cells”,Solar Energy Materials and Solar Cells, Vol.95, No.4, pp.1146-1150 (2011).

 

212. K. Hong, and J. –L. Lee, “Review paper:Recent developments in light extraction technologies of organic light emitting diodes”, Electronic Materials Letters, Vol. 7, No.2, pp77-91 (2011).

 

211. S. Kim, K. Hong, and J. –L. Lee, “In-situ determination of interface dipole energy between Alq3 and MgO coated Al in inverted top-emitting organic light-emitting diodes”, Japanese Journal of Applied Physics, Vol. 50, No.10, pp.101602-101602 (2011).

 

210. K. S. Choi, Y. Park, J. S. Yoo, S. Y. Kim, H. Yang, G. H. Jung, and J. –L. Lee, “Effect of ZnCdSe/ZnSe core/shell quantum dots on the efficiency of organic photovoltaic cells”, Electrochemical and Solid-State Letters, Vol. 14, No.7, pp. B74-76 (2011).

 

 

2010

 

209. B. J. Song, K. Hong, W.-K. Kim, K. Kim, S. Kim, and J.-L. Lee, “Effect of oxygen plasma treatment on crystal growth mode at pentacene/Ni interface in organic thin-film transistors”,Journal of Physical Chemistry B, Vol.114, No.46, pp.14854-14859 (2010).

 

208. D. Myung, Y. Lee, J. Lee, H. K. Yu, J. -L. Lee, J. M. Baik, W. Kim, and M. H. Kim, “Synthesis of metallic ReO3 nanowires”, Physica Status Solidi – RRL, Vol.4, No.12, pp.365-367 (2010),

 

207. H. K. Yu and J. -L. Lee, “Growth mechanism of MgO film on Si (100): Domain matching epitaxy, strain relaxation, preferred orientation formation”, Crystal Growth & Design, Vol.10, No.12, pp.5200-5204 (2010)

 

206. S. Kim, K. Hong, K. Kim, I. Lee, K.-B. Kim, D. Y. Lee, T.-Y. Kim, J.-L. Lee, “Hole injection layer of thermally evaporated copper oxide for top emitting organic light emitting diodes”,Journal of The Electrochemical Society, Vol. 157, No.10, pp. J347-J350 (2010)

 

205. J. H. Son, H. K. Yu and J.-L. Lee, “MgO nano-pyramids structure for enhancement of light extraction efficiency in vertical light-emitting diodes” Optics Express Vol. 18, No.S3, pp.A403-410 (2010)

 

204. K. Hong, H. K. Yu, I. Lee, K. Kim, S. Kim, and J-L. Lee, “Enhanced light out-coupling of organic light emitting diodes: Spontaneously formed nano-facet structured MgO as a refractive index modulation layer”, Advanced Materials, Vol. 22, pp. 4890 (2010)

 

203. J. H. Son, and J.-L. Lee, “Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes”, Appl. Phys. Lett, Vol.97, No.3, pp.032109 (2010)

 

202. G. H. Jung, J. H. Son, Y. H. Song, and J.-L. Lee, “Strain induced suppression of silver agglomeration of indium-containing silver contact” Appl. Phys. Lett Vol.96, pp.201904 (2010)

 

201. J. H. Son, and J.-L.Lee, “Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes,” Opt. Express Vol.18, No.6, pp.5466-5471 (2010)

 

200. Y. H. Song, J. H. Son, G. H. Jung, and J.-L. Lee, “Effects of Mg additive on inhibition of Ag agglomeration in Ag-based Ohmic contact on p-GaN”, Electrochemical and Solid-State Letters, Vol13, No6, H173-H175(2010)

 

199. H. W. Jang,S. W. Ryu, , H. K. Yu, S. Lee, and J.-L. Lee, “The role of reflective p-contact in the enhancement of light extraction in nano-textured vertical InGaN light-emitting diodes”,Nanotechnology, Vol21, No2, pp025203(2010)

 

 

2009

 

198. K. Hong, K. Kim, and J.-L. Lee, “Enhancement of electrical property by oxygen doping to copper phthalocyanine in inverted top emitting organic light emitting diodes” Applied Physics Letters, Vol 95, pp213307(2009)

 

197. H. W. Jang, S. Lee, S. W. Ryu, J. H. Son, Y. H. Song, and J.-L. Lee, “Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN”, Electrochemical and Solid-State Letters, Vol12, No11, H405-H407(2009)

 

196. J. H. Son, Y. H. Song, H. K. Yu, and J.-L. Lee, “Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN”, Applied Physics Letter, Vol95, pp062108 (2009)

 

195. S. Y. Han, J.-L. Lee, and S. J. Pearton, “Characteristics of SiC pillar-shaped nanostructure Schottky diode”, Journal of Applied Physics, Vol106, pp023709 (2009).

 

194. K. Hong, K. Kim, S. Kim, Y. H. Song, H. J. Kim, K. H. Song, K. C. Ahn, Y.-H. Tak, and J.-L. Lee, “In Situ Analysis of Hole Injection Barrier of Molybdenum-Oxide-Coated Anode with Organic Materials Using Synchrotron Radiation Photoemission Spectroscopy”, Journal of The Electrochemical Society, Vol156, No8, pp. H648-H653 (2009).

 

193. S. Y. Kim, K. Kim, K. Hong, and J.-L. Lee, “Investigation of metal peel-off technique for the fabrication of flexible organic light emitting diodes”, Journal of The Electrochemical Society, Vol156, No9, J253-J257 (2009).

 

192. W.-K. Kim, B. J. Song, K. Hong, K. Kim, and J.-L. Lee, “Effect of O2-Plasma Treatment of Mo on the Crystal Growth Mode of Pentacene of Organic Thin-Film Transistors ”, Journal of The Electrochemical Society, Vol156, No8, H674-H678 (2009).

 

191. H. K. Yu, W.-K. Kim, J.-L. Lee, E. C. Park, J. S. Kim and J. H. Ryu, “Degradation mechanism of secondary electron emission in plasma exposed MgO films”, Japanese Journal of Applied Physics, Vol48, pp076003 (2009)

 

190. S. Y. Han, J.-L. Lee, and S. J. Pearton, “Electrical properties of nanoscale Au contacts on 4H-SiC,” Journal of Vacuum Science and Technology B, Vol27, No4, pp1870-1873(2009).

 

189. H. W. Jang and J.-L. Lee, “Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n -type GaN, Applied Physics Letters, Vol.94, No.18, No. 182108  (2009).

 

188. S. Y. Kim, K. Hong, H. W. Choi, K. Y. Kim, Y. -H. Yak and J.-L. Lee, “Correlation between charge injection and charge balance in organic light emitting diodes using LiF and IrOx interlayers,” Jounral of The Electrchemical Society, Vol. 156 No.4, pp J57-J61 (2009).

 

 

2008

 

187. J. M. Baik, Y. Shon, S. J. Lee, Y. H. Jeong, T. W. Kang, and J.-L. Lee, “Electronic structure and magnetism in transition metals-doped 8-hydroxy-quinoline aluminum,“ Journal of American Chemical Society, Vol. 130 No.41, pp 13522-13523 (2008).

 

186. J. H. Son, K. H. Jung, and J.-L. Lee, “Highly reflective Ag-Cu alloy-based Ohmic contact on p-type GaN using Ru overlayer,” Optics Letter, Vol. 33 No.24, pp 2907-2909(2008).

 

185. S. Y. Kim, K. S. Kim, K. H. Hong, and J.-L. Lee, “Flexible organic light emitting diodes using a metal peel-off method,” IEEE Photonics Letters Vol.20 No.22, pp.1836-1838 (2008).

 

184. S. Y. Kim and J.-L. Lee, “Effect of interfacial layer thickness on the formation of interface dipole in metal/tris(8-hydroxyquinoline) aluminum interface,” Organic Electronics, Vol.9, No.5, pp. 678-686  (2008)

 

183. J. H. Son, K. H. Jung, and J.-L. Lee, “Enhancement of light reflectance and thermal stability in Ag-Cu alloy contacts on p-type GaN,” Applied Physics Letters, Vol. 93, No.1, pp. 012102  (2008)

 

182. H. W. Jang, J. H. Son, and J.-L. Lee, “Formation of high-quality Ag-based ohmic contacts to p-type GaN,” Jounral of The Electrchemical Society, Vol. 155,No.8 pp. H563~H568 (2008)

 

181. S. Y. Kim, K. Hong, K. Kim, H. K. Yu, W.-K. Kim and J.-L. Lee, “Effect of N2, Ar, and O2 plasma treatments on surface properties of metals”, Journal of Applied Physics, Vol,103, No.7,  pp.076101 (2008)

 

180. S. Y. Kim, K. Hong, K. H. Choi, K. H. Song, K. C. Ahn and J.-L. Lee, “Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O2 plasma treatment, Solid State Electronics, Vol.52, No.1, pp.1~6(2008).

 

179. S. Y. Kim, K. Hong, J. H. Son, G. H. Jung, K. H. Choi, K. H. Song, and K. C. Ahn and J.-L. Lee, “Oxygen-plasma-treated indium-tin-oxide Films on Nonalkali glass deposited by super density arc plasma ion plating,” Japanese Journal Applied Physics, Vol.47, No.2, pp.862-866(2008)

 

178. J. M. Baik, J.-L. Lee, Y. Shon, T. W. Kang, “Synthesis of ferromagnetic and transparent cobalt-doped indium-tin oxides by magnetron sputtering,” Japanese Journal of Applied Physics, Vol, 47, No.1  pp.142~145 (2008)

 

177. K. Hong and J.-L. Lee, “Inverted top-emitting organic light emitting diodes using transparent silver oxide anode formed by oxygen plasma,” Electrochemical and Solid-State Letters, Vol.11, No.2, pp.H29~H31 (2008).

 

176. J. M. Baik, J.-L. Lee, Y. Shon, T. W. Kang, “Observation of ferromagnetic ordering in Mn-doped 8-hydroxy-quinoline aluminum, PSS-RRL, Vol.2, No.1, pp. 22-24(2008)

 

175. W.-K. Kim and J.-L. Lee, “Effect of UV irradiation on threshold voltage and sub-threshold slope in pentacene TFT,” Electrochemical and Solid-State Letters, Vol. 11, No.1, pp.H4-H6(2008)

 

 

2007

 

174. S. Lee, J. H. Son, and G. H. Jung, Y. G. Kim, C. Y. Kim, and Y. J. Yoon, and J.-L. Lee, “Highly reflective MgAl alloy/Ag/Ru ohmic contact with low contact resistivity on p-type GaN”, Applied Physics Letters, Vol. 91, No.22, pp.222115 (2007).

 

173. B. M. Won, J. H. Je, and J.-L. Lee,  “Lifetime dispersion in a single quantum dot”, Applied Physics A, Vol. 89, No.4 , p. 1029-1031 (2007).

 

172. K. Hong, S. Y. Kim, W.-K. Kim and J.-L. Lee, “Enhancement of electroluminescence properties in organic light emitting diodes on polyethylene terephthalate with ruthenium-oxide-coated anode and Mg-Al alloy cathode,” Journal of The Electrochemical Society, Vol. 154, No.9, H782-H788(2007).

 

171. H .S. Lee, J. H.Cho, W.-K..Kim, J.-L.Lee, K. Cho, “Effects of physical treatment of  ITO electrodes on the electrical properties of  pentacene thin-film transistors” Electrochemical and Solid-State Letters, Vol .10, No.8 pp.H239-H242(2007)

 

170. S. Y. Kim, K. Hong and J.-L. Lee, “The change of interface dipole energy with interfacial layer thickness and O2 plasma treatment in metal/organic interface, Applied Physics Letters, Vol.90, pp.183508(2007)

 

169. J. H. Son, H. W. Jang, and J.-L. Lee, “Erratum : “Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN” [Appl. Phys. Lett. 85, 4421 (2004)],” Applied Physics Letters, Vol.90, pp.109903(2007)

 

168. E. Kannan, S. Kumar, I. Farrer, D. Ritchie, H. Beere, J. H. Son, J. M. Baik, J.-L. Lee, D.-H. Youn, K. Y. Kang, and G. H. Kim, “Short Range Scattering Effect of InAs Quantum Dots in the Transport Properties of Two Dimensional Electron Gas,” Applied Physics Letters, Vol.90, pp.152110(2007)

 

167. J. H. Cho, H. S. Lee, M. Whang, H. H. Choi, W. K. Kim, Jong-Lam Lee, and K. Cho, “Enhancement of Hole Injection in Organic TFTs by Ozone Treatment of Indium Tin Oxide Electrodes”, Electrochemical and Solid-State Letters, Vol.10, No.5, H156-H159(2007).

 

166. J. M. Baik, T. W. Kang, and J.-L. Lee, “Effects of N2O plasma treatment on magnetic properties of (Zn,Mn)O nanorods,” Nanotechnology, Vol.18, No.9, pp.095703(2007)

 

165. K. Hong, S. Y. Kim, W.-K. Kim and J.-L. Lee, “Enhancement of electron injection in flexible organic light emitting diodes using magnesium doped tris (8-hydroxyquinoline) aluminum layer,” Electrochemical and Solid-State Letters, Vol.10, No.3, H104-H106(2007)

 

164. W.-K. Kim and J.-L. Lee, “In situ analysis of hole injection barrier of O2 plasma-treated Au with pentacene using photoemission spectroscopy,” Electrochemical and Solid-State Letters, Vol.10, No.3, H85-H87(2007)

 

163. H. W. Jang, J. H. Son and Jong-Lam Lee, "High reflective and low resistance Ag-based Ohmic contacts on p-type GaN using Mg overlayer,” Applied Physics Letters, Vol.90, pp012103(2007)

 

 

2006

 

162. S. Y. Kim and J.-L. Lee, “In-situ determination of interface dipole energy in organic light emitting diodes with iridium interfacial layer using synchrotron radiation photoemission spectroscopy”, Applied Physics Letters, Vol.89, pp.223515 (2006).

 

161. Y. Shon, S. Lee, H. C. Jeon, Y. S. Park, D. Y. Kim, T. W. Kang, J. S. Kim, E. K. Kim, D. J. Fu, X. J. Fan, Y. J. Park, J. M. Baik, and J. L. Lee, “Enhanced Curie Temperature persisting between 100 and 200 K (~ 50 K by theory) with Mn(~ 0.290 %) based on InMnP:Zn,”  Journal of Crystal Growth, Vol.297, No.2, pp.289 (2006)

 

160. J. M. Baik. Y. Shon, T. W. Kang, and Jong-Lam Lee, “Enhancement of magnetic properties in (Ga, Mn)N nanowires due to N2 plasma treatment”, Applied Physics Letters, Vol.89, pp.152113 (2006)

 

159. H. W. Choi, W.-K. Kim, S. Y. Kim, K. Y. Kim, and J.-L. Lee, “Effect of magnesium oxide buffer-layer on performance of inverted top-emitting organic light-emitting diodes, Journal of Applied Physics, Vol.100, pp.064106 (2006)

 

158. S. Y. Kim, K. Y. Kim, Y. -H. Yak, and J.-L. Lee, “A dark spot formation mechanism in organic light emitting diodes,” Applied Physics Letters, Vol.89, pp.132108 (2006).

 

157. W.-K. Kim, K. Y. Hong, and J.-L. Lee, “Enhancement of hole injection in pentacene organic thin-film transistor of O2 plasma-treated Au electrodes,” Applied Physics Letters, Vol.89, pp.142117 (2006).

 

156. W.-K. Kim and J.-L. Lee, “Effect of oxygen plasma treatment on reduction of contact resistivity at pentacene/Au interface”, Applied Physics Letters, Vol.88, pp.262102 (2006).

 

155. Y. Shon, S. Lee, H. C. Jeon, Y. S. Park, D. Y. Kim, T. W. Kang, J. S. Kim, E. K. Kim, D. J. Fu, X. J. Fan, Y. J. Park, J. M. Baik, and J. L. Lee, “Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10  at.  %),” Applied Physics Letters, Vol.89, pp.082505 (2006)

 

154. S. Y. Kim and J.-L. Lee, “Enhancement of optical properties in organic light emitting diodes using Mg-Al alloy cathode and IrOx-coated indium tin oxide anod”, Applied Physics Letters, Vol .88, pp.112106 (2006)

 

153. C. M. Jeon, K.-Y. Park, J.-H. Lee, J.-H. Lee and Jong-Lam Lee, “Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrode, Journal of Vacuum Science and Technology B,  Vol.24, pp.1303 (2006)

 

152. J.-Y. Lin, J-.H. Chen, G. Kim, H. Park, D. H. Yun, C. M. Jeon, J. M. Baik, J.-L. Lee, C.-T. Liang, and Y. F. Chen, “Magnetrotransport measurements on an AlGaN/GaN two dimensional system,” Journal of Korean Physical Society, Vol. 49, pp.1130 (2006)

 

151. J. H. Cho, W. H. Lee, Y. D. Park, W. K. Kim, S. Y. Kim, Jong-Lam Lee, and K. Cho, “Enhancement of electron injection using reactive self-assembled monolayer in organic electronic devices”, Electrochemical and Solid-State Letters, Vol.9, No.4, G147 (2006)

 

150. J. H. Cho, Y. D. Park, D. H. Kim, W. K. Kim, H. W. Jang, Jong-Lam Lee, and K. Cho, “Reactive metal contact at Indium-Tin-Oxide/self-assembled monolayer interfaces”, Applied Physics Letters, Vol. 88, pp.102104 (2006)

 

149. B. M. Won, S. Y. Kim, J.-L. Lee, and J. H. Je, “Evolution of luminance by voltage in organic light-emitting diodes”, Applied Physics Letters, Vol. 88, No.1 pp. 013503 (2006).

 

148. S. Y. Kim, W.-K. Kim, K. Y. Kim, Y. -H. Yak, and J.-L. Lee, “Efficient electron injection in organic light emitting diodes with Al-Mg alloy cathode”, Electrochemical and Solid-State Letters, Vol. 9, No.1, pp.H1 (2006).

 

 

2005

 

147. S. Y. Kim and J.-L. Lee, “Effect of thin iridium oxide on the formation of interface dipole in organic light emitting diodes”, Applied Physics Letters, Vol. 87, No.23, pp. 232105 (2005).

 

146. H. K. Kim, H. W. Jang, and Jong-Lam Lee, “Photoemission-induced charging of self-assembled Au nanoparticles on GaN substrates and the effect on surface band bending,” Journal of Applied Physics, Vol. 98,  p.104309 (2005).

 

145. B. M. Weon, Jong-Lam Lee, and J. H. Je, “A unified decay formular for luminescence decays,” Journal of Applied Physics, Vol. 98, p.096101  (2005).

 

144. S. Y. Kim, J. M. Baik, H. K. Yu, and J.-L. Lee, “Highly efficient organic light emitting diodes with hole injection layer of transition metal oxides”, Journal of Applied Physics, Vol. 98, p. 093707 (2005).

 

143. H. W. Jang, and Jong-Lam Lee, "Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer,” Journal of Vacuum Science and Technology B, Vol. 23, No. 6, pp. 104309 (2005)

 

142. H. W. Choi, S. Y. Kim, W. K. Kim, and Jong-Lam Lee, “Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using insulating magnesium oxide buffer-layer”, Applied Physics Letters, Vol  87, pp.082102 (2005).

 

141. S. Y. Kim, J. M. Baik, H. K. Yu, K. Y. Kim, Y.-H. Tak, and J.-L. Lee, “Rhodium-oxide-coated indium tin oxide for enhancement of hole injection in organic light emitting diodes”, Applied Physics Letters, Vol. 87, pp. 072105 (2005).

 

140. J. M. Baik. Y. Shon, T. W. Kang, and Jong-Lam Lee, “Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma”, Applied Physics Letters, Vol. 87, pp. 042105 (2005).

 

139. S. Y. Kim, J. M. Baik, and J.-L. Lee, “Determination of interface dipole energy at the interface or ruthenium-oxide-coated anode with organic material using synchrotron radiation photoemission spectroscopy”, Electrochemical and Solid-State Letters, Vol. 8, No.9, pp. H79 (2005).

 

138. J. M. Baik and J. –L. Lee, “Fabrication of vertically well-aligned (Zn,Mn)O nanorods with room temperature ferromagnetism”, Advanced Materials, Vol. 17, No. 22, pp. 2745-2748 (2005).

 

137. J. M. Baik., Hyung Kyun Jo, and Jong-Lam Lee, “Effects of implanted nitrogen on the microstructural, optical, and magnetic properties of Mn-implanted GaN”, Jounral of The Electrchemical Society, Vol. 152, No. 8, pp. G608 (2005).

 

136. K. H. Kim, C. M. Jeon, S. H. Oh, Jong-Lam Lee, C. G. Park, J. H. Lee, K. S. Lee, and Y. M. Koo, “Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructure field-effect transistor”, Journal of Vacuum Science and Technology B, Vol. 23, No. 1, pp. 322 (2005)

 

135. J. H. Cho, J. A. Lim, J. T. Han, H. W. Jang, Jong-Lam Lee, and K. Cho, “Control of the electrical and adhesion properties of metal/organic interfaces with self-assembled monolayers”, Applied Physics Letters, Vol. 86, No.17, pp. 171906 (2005)

 

134. C. M. Jeon and Jong-Lam Lee, “Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field effect transistors,” Applied Physics Letters, Vol. 86, No.17, p.172101 (2005).

 

133. Iee-Gon Kim, Kyoung Jin Choi, and Jong-Lam Lee, “Fermi level pinning on Si0.83Ge0.17 surfaceby inductively coupled plasma treatment,” Journal of Vacuum Science and Technology B,Vol.23, No.2, pp.495-498 (2005).

 

132. J. M. Baik . Y. Shon, T. W. Kang, and Jong-Lam Lee, “Ferromagnetic (Ga,Mn)N nanowire grown by a chemical vapor deposition method”, Journal of Vacuum Science and Technology B, Vol. 23, No. 2, pp. 530 (2005).

 

131. S. Y. Kim, K.-B. Kim, Y.-H. Tak, and J.-L. Lee, “Enhancement of hole injection using iridium oxide coated indium tin oxide anodes in organic light emitting diodes”, Applied Physics Letters, Vol. 86, No.13,  pp. 133504 (2005).

 

130. J.S.Gwag, K.H.Park, J-L Lee, J.K.Kim and T.H. Yoon, “Two-domain hybrid-aligned nematic cell fabricated by ion bean treatment of vertical alignment layer”, Japanese Journal of Applied Physics,Vol. 44 , No.4A, pp.1875-1878 (2005)

 

129. H. W. Choi, S. Y. Kim, K. B. Kim, Y.-H. Tak, and Jong-Lam Lee, " Enhancement of hole injection using O2 plasma-treated Ag anode for top-emitting organic light-emitting diodes,” Applied Physics Letters, Vol. 86, pp.012104 (2005)

 

 

2004

 

128. H. W. Jang, and Jong-Lam Lee, " Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaN,” Applied Physics Letters, Vol. 85, No. 24, pp.5920~5922 (2004)

 

127. S. Y. Han and Jong-Lam Lee, "Thermally stable SiC MESFET with Iridium oxide gate electrode,” Electronic Letter, Vol. 40, No. 24, pp.1556~1557 (2004)

 

126. H. W. Jang, and Jong-Lam Lee, "Low resistance and high reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN,” Applied Physics Letters, Vol. 85, No. 19, pp.4421~4423 (2004)

 

125. J. M. Baik, S. U. Kim, Y. M. Koo, T. W. Kang,  and Jong-Lam Lee, “Evidence of Mn occupation of Ga site in ferromagnetic (Ga, Mn)N semiconductor observed by EXAFS,” Electrochemical and Solid-State Letters, Vol. 7, No. 12, G313~G315 (2004)

 

124. K-Y Park, H-I Cho, H-C Choi, Y-H Bae, C-S Lee, Jong-Lam Lee and J-H Lee, “ Device Characteristics of AlGaN/GaN MIS-HFET Using Al2O3-HfO2 Laminated High-k Dielectric,” Japanese Journal of Applied Physics, Vol. 43, No. 11A, L1433~L1435 (2004)

 

123. S. Y. Han, and Jong.-Lam Lee, "Response to “Comment on ‘Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy”" Applied Physics Letters,  Vol. 84, No.4, pp.538~540 (2004)

 

122. H. W. Jang, J. M. Baik, M. K. Lee, H. J.Shin, and Jong-Lam Lee, "Incorporation of Oxygen Donors in AlGaN,” Journal of Electrochemical Society, Vol. 151, No. 8, G536~G540  (2004).

 

121. C.C. Kim, S.K. Seol, J.K.Kim, J-L. Lee, Y.Hwu, P.Ruterana, G. Magaritondo, and J.H.Je, “Metal/GaN reaction chemistry and their electrical properties,” Physica Status Solidi (b), Vol. 241, No. 12 pp.2771~2774 (2004)

 

120. S. Y. Kim, H. W. Jang and Jong-Lam Lee, “ High-brightness GaN-based light-emitting diode with  indium-tin-oxid-based transparent ohmic contact,” Journal of Vacuum Science and Technology B, Vol. 22, No. 4, pp. 1851~1857 (2004)

 

119. J. K. Kim, E. L. Waldron, Yun-Li Li, T. Gessmann, E. F. Schubert, H. W. Jang, and Jong-Lam Lee, “P-type conductivity in bulk AlxGa1–xN and AlxGa1–xN/AlyGa1–yN superlattices with average Al mole fraction > 20 %,” Applied Physics Letters, Vol. 84, No. 17 pp.3310~3312 (2004).

 

118. C. M. Jeon, J.-H. Lee, J.-H. Lee, and Jong-Lam Lee, “ The Improvement of DC Performance in AlGaN-GaN HFETs With Isoelectronic Al-Doped Channels,” IEEE Electron Device Letter, Vol. 25, No. 3 pp.120~122 (2004)

 

117. S. Y. Kim and Jong-Lam Lee, “Highly reflective and low-resistant Ni/Au/ITO/Ag ohmic contact on p-type GaN, “ Electrochemical and Solid-State Letters, Vol.7, No.5, G102~G104 (2004)

 

116. S. Y. Kim, Jong-Lam Lee, K-B Kim and Y-H Tak, “ Effect of ultra violet-ozone treatment of indium tin oxide on electrical properties of organic light emitting diodes,” Journal of Applied Physics, Vol. 95, No. 5, pp. 2560~2563 (2004)

 

115. J. M. Baik, Y.Shon, T.W.Kang, and Jong-Lam Lee, “Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN,” Applied Physics Letters, Vol. 84, No. 7, pp. 1120~1122 (2004)

 

114. J. K. Kim and Jong-Lam Lee, “GaN metal-semiconductor-metal ultraviolet photodetectors with transparent and thermally stable RuO2 and IrO2 Schottky contacts,” Journal of The Electrochemical Society, Vol. 151, No. 3, G190~G195 (2004)

 

113. J.-K. Yang, H.-H. Park, H. Kim, H. W. Jang, Jong-Lam Lee, S. Im, “Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface,“ Thin Solid Films, Vol. 447~448, pp. 626~631 (2004)

 

112. S. Y. Han, and Jong.-Lam Lee, "Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy," Applied Physics Letters, Vol.84, No.4, pp. 538~540, (2004)

 

111. K.H. Lee, H.W. Jang, K-B Kim, Y-H Tak and Jong-Lam Lee, “Mechansim for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment," Journal of Applied Physics Vol. 95, No. 2, pp. 586~590 (2004)

 

110. C. M. Jeon and Jong-Lam Lee, “Investigation IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructure,” Journal of Applied Physics, Vol. 95, No. 2, p.698~704 (2004).

 

 

2003

 

109. C. M. Jeon, and Jong-Lam Lee, “Response to “Comment on ‘Enhancement of Schottky barrier heigt on AlGaN/GaN heterostructure by oxidation annealing,” Applied Physics Letters, Vol. 83,No.25, pp. 5319-5321 (2003).

 

108. J. K.Kim, H.W. Jang, and Jong-Lam Lee, “Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Scottky diodes," Journal of Applied Physics, Vol. 94, No. 11, pp. 7201~7205 (2003).

 

107. S. Y. Han and Jong-Lam Lee, “Characteristics of Schottky contacts on n-type 4H-SiC using IrO2 and RuO2,” Journal of Applied Physics,  Vol. 94, No. 9, pp. 6159~6166 (2003).

 

106. J. M. Baik, H. S. Kim, C. K. Park, and Jong-Lam Lee, “Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN,” Applied Physics Letters, Vol .83, No. 13, pp.2632~2634 , (2003).

 

105. S. Y. Han, K. J. Choi, Jong-Lam Lee, J. K. Mun, M. Park, and H. Kim, “Electrical characteristics of MIS Schottky diode using photowashing treatment in AlXGa1XAs/InGaAs (X = 0.75) pseudomorphic high electron mobility transistor (PHEMT),” Journal of Vacuum Science and Technology B, Vol .21, No. 5, pp.2133~2137 (2003).

 

104. H. W. Jang, Jong-Lam Lee, and T. Sands, “Effects of KrF Excimer laser-irradiated on Metal Contacts to N-type and P-type,” Journal of Applied Physics, Vol .94, No. 5, pp.3529~3535 (2003).

 

103. H. W. Jang and Jong-Lam Lee, “Effect of Cl2 plasma treatment on metal contacts on n-type and p-type GaN,” Journal of The Electrochemical Society, Vol. 150, No. 9, pp. G 513~519 (2003).

 

102. K. J. Choi, S. Y. Han, Jong-Lam Lee, J. K. Moon, M. Park, and H. Kim, “Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlXGa1-XAs/InGaAs (X = 0.75) pseudomorphic high electron mobility transistor,” Journal of theKorean Physical Society, Vol .43, No. 2,  pp.253~258 (2003).

 

101. C. M. Jeon, and Jong-Lam Lee, “Response to “Comment on ‘Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure,” Applied Physics Letters, Vol .83, No. 6, pp.1272~1274 (2003).

 

100. J. H. Lee, S. H. Hahm, J. H. Lee, S. B. Bae, K. S. Lee, Y. H Cho, and Jong-Lam Lee, “Effect of Al-doping in GaN Films Grown by Metal Organic Chemical Vapor Deposition,” Applied Physics Letters, Vol .83,No. 5,pp.917~919 (2003).

 

99. H. W. Jang, S. Y. Kim and Jong-Lam Lee, “Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN,” Journal of Applied Physics, Vol. 94, No.3, pp.1748~1752, (2003).

 

98. K. J. Choi, S. Y. Han, and Jong-Lam Lee, “Degradation mechanism of Schottky diodes on inductively-coupled-plasma-etched n-type 4HSiC,” Journal of Applied Physics, Vol. 94, No. 3, p.1765~1768, (2003).

 

97. B. T. Lee, J. Y. Shin, S. H. Kim, J. H. Kim, S. Y. Han, and Jong-Lam Lee, “Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC,” Journal of Electronic Materials. Vol. 32, No. 6, pp. 501~504 (2003).

 

96. C. M. Jeon and Jong-Lam Lee, “Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing,” Applied Physics Letters, Vol. 82, No. 24, p.4301~4303, (2003).

 

95. S. Y. Han, H. W. Jang and Jong-Lam Lee,  “ IrO2 Schottky contact on n-type 4H-SiC,” Applied Physics Letters, Vol. 82, No. 26, pp. 4726~4728,  (2003).

 

94. J. M. Baik, Jong-Lam Lee, Y. Shon, and T. W. Kang, “Microstructural, optical, and magnetic properties of Mn-implanted and annealed p-type GaN,” Journal of Applied Physics, Vol. 93, No. 11, pp. 9024~9029 (2003).

 

93. H. W. Jang, H. K. Cho, J. Y. Lee, and Jong-Lam Lee, “Microstructural and electrical investigation of low-resistant and thermally stable Pd/Ni contact on p-type GaN,” Journal of The Electrochemical Society, Vol. 150, No. 3 pp.G212-G215 (2003).

 

92. H. W. Jang and Jong-Lam Lee, “Transparent ohmic contacts of oxidized Ru and Ir on p-type GaN,” Journal of Applied Physics, Vol. 93, No. 9, pp. 5416~5421, (2003).

 

91. D. H. Youn, V. Kumar, J. H. Lee, R. Schwindt W.J. Chang, J.Y. Hong, C.M. Jeon, S.B. Bae, M.R. Park, K.S. Lee, Jong-Lam Lee, J.H. Lee and I. Adesida, “High power 0.25 μm gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz,” IEE Electronic Letters, Vol. 39, No. 6, p.566~567 (2003).

 

90. J. K. Kim and Jong-Lam Lee, “Effect of surface treatment on Schottky barrier height of p-type GaN,” Journal of The Electrochemical Society, Vol. 150, No. 3, p. G209~211 (2003).

 

89. K. J. Choi, H. W. Jang, and Jong-Lam Lee, “Observation of inductively-coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy,” Applied Physics Letters, Vol. 82, No. 8, p. 1233~1235 (2003).

 

88. J. M. Baik, H. W. Jang, J. K. Kim, and Jong-Lam Lee, “Effect of microstructural change on magnetic property of Mn-implanted p-type GaN,” Applied Physics Letters, Vol.82, No 4, p.583~585 (2003).

 

87. H. W. Jang, J. K. Kim, Jong-Lam Lee J. Schroeder, and T. Sands, “Electrical properties of metal contacts on laser-irradiated n-type GaN,” Applied Physics Letters, Vol.82, No 4, p.580~582 (2003).

 

86. K.H. Kim, S.H. Yoon , E. J. Yoon , Y. M. Koo and Jong-Lam Lee, “Aspect ratio dependent strains in InAs/InP quantum dots measured by synchrotron radiation X-ray diffraction,” Journal of Vacuum Science and Technology B, Vol. 21, No. 1 p.183~185  (2003).

 

85. C. M. Jeon, H. W. Jang, and Jong-Lam Lee, “Thermally stable Ir contact on AlGaN/GaN heterostructure,” Applied Physics Letters, Vol. 82, No.3, p.391~393 (2003).

 

84. S. Y. Kim, H. W. Jang, and Jong-Lam Lee, “Effect of an Indium tin oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN,” Applied Physics Letters, Vol. 82, No.1, p.61~63 (2003).

 

83. J. K. Kim, H. W. Jang, C. C. Kim, J. H. Je, K. A. Rickert, T. F. Kuech, and Jong-Lam Lee, “Microstructural study of Pt contact on p-type GaN,” Journal of Vacuum Science and Technology B, Vol. 21, No. 1, p.87~90 . (2003).

 

82. S. Y. Han, and Jong-Lam Lee, “Effect of surface treatment using Cl2 inductively coupled plasma on Schottky characteristics of n-type 4H-SiC,” Journal of The Electrochemical Society, Vol. 150, No. 1, p. G45-G48. (2003).

 

~ 2002

 

81. K. A. Rickert, A. B. Ellis, J. K. Kim, Jong-Lam Lee, F. J. Himpsel, F. Dwikusuma, and T. F. Kuech, “X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN,” Journal of Applied Physics, Vol. 92, No. 11, p. 6671~6678 (2002).

 

80. J. K. Kim, H. W. Jang, C. M. Jeon, and Jong-Lam Lee, “GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact,” Applied Physics Letters, Vol. 81, No. 24, p.4655~4657  (2002).

 

79. Y. H. Tak, K. B. Kim, H. G. Park, K. H. Lee, Jong-Lam Lee, "Criteria for ITO (indium-tin-oxide) thin film as the bottom electrode of an organic light emitting diode," Thin Solid Film, Vol. 411, No. 1,  p.12~16 (2002)

 

78. S. Y. Kim, H. W. Jang, J. K. Kim, C. M. Jeon, W. I. Park, G.-C. Yi, and Jong-Lam Lee, “Low-resistance Ti/Al ohmic contact on undoped ZnO,” Journal of Electronic Materials, Vol. 32, No. 8, p.868~871 (2002).

 

77. H. W. Jang, C. M. Jeon, K. H. Kim, J. K. Kim, S. B. Bae, J. H. Lee, J. W. Choi, and Jong-Lam Lee, “Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructures,” Applied Physics Letters, Vol. 81, No. 7, p.1249~1251, (2002).

 

76. C. M. Jeon, H. W. Jang, K. J. Choi, S. -B. Bae, J. H. Lee, and Jong-Lam Lee, “Room-Temperature Ohmic Contact on AlGaN/GaN Heterostructure with Surface Treatment Using N2 Inductively Coupled Plasma,” Electrochemical and Solid-State Letters, Vol. 5, No. 7, p. G45~G47, (2002)

 

75. K. J. Choi, C. M. Jeon, H. W. Jang and Jong-Lam Lee, “Effects of photowashing treatment on electrical properties of AlGaN/GaN heterostructure field-effect transistor,” Journal of Vacuum Science and Technology B, Vol. 20, No. 4, p. 1574 ~1577(2002).

 

74. S. Y. Han, J. Y. Shin, B. T. Lee and Jong-Lam Lee, “Microstructural interpretation of Ni ohmic contact on n-type 4H-SiC,” Journal of Vacuum Science and Technology B, Vol.20, No.4 p. 1496~1500, (2002).

 

73. H. W. Jang, J. H. Lee, and Jong-Lam Lee, “Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical vapor deposition,” Applied Physics Letters,  Vol. 80, No.21, p.3955~3957, (2002).

 

72. K. J. Choi, J. K. Moon, H. Kim and Jong-Lam Lee, “Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors,” Japanese Journal of Applied Physics, Vol .41, No 5A, p.2894~2899 (2002).

 

71. C. M. Jeon, H. W. Jang, K. J. Choi, S. B. Bae, J. H. Lee  and Jong-Lam Lee, "Fabrication of AlGaN/GaN HFET using room-temperature ohmic contact," Solid State Electronics, Vol. 46, No.5, p.695~698 (2002)

 

70. H. W. Jang, W. Urbanek, M. C. Yoo, and Jong-Lam Lee, “Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN,” Applied Physics Letters, Vol. 80, No. 16, p.2937~2939 (2002).

 

69. J. K. Kim and Jong-Lam Lee, “Effect of Au Overlayer on Thermal Stability of Pt Transparent Ohmic Contact on P-type GaN,” Journal of The Electrochemical Society, Vol. 149, No. 4, p. G266~G270, (2002).

 

68. S. M. Kong, H. J. Choi, B. T. Lee, S. Y. Han and Jong-Lam Lee, “Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma,” Journal of Electronic Materials, Vol.31, No. 3, p.209~213 (2002)

 

67. S. Y. Han and Jong-Lam Lee, “Effect of interfacial reactions on electrical properties of Ni contacts on lightly doped n-type 4H-SiC,” Journal of The Electrochemical Society, Vol. 149, No. 3, p G189~G193(2002).

 

66. J. K. Kim, H. W. Jang, and Jong-Lam Lee, “Mechanism for ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy,” Journal of Applied Physics, Vol. 91, No. 11, p. 9214~9217 (2002).

 

65. K. J. Choi and Jong-Lam Lee, “Effects of photowashing treatment on electrical properties of GaAs metal-semiconductor field-effect transistors,” Journal of Vacuum Science and Technology B, Vol. 20, No. 1, p.274~277 (2002),

 

64. H. W. Jang, K. H. Kim, J. K. Kim, S. W. Hwang, J. J. Yang, K. J. Lee, S. J. Son and Jong-Lam Lee, “Low-resistance and thermally-stable ohmic contact on p-type GaN using Pd/Ni metallization,” Applied Physics Letters, Vol. 79,No. 12, p.1822-1824 (2001).

 

63. S. Y. Han, K. H. Kim, J. K. Kim, H. W. Jang, K. H. Lee, N. K. Kim, E. D. Kim and Jong-Lam Lee, “Ohmic contact formation mechanism of Ni on n-type 4H-SiC,” Applied Physics Letters, Vol. 79, No. 12, p.1816~1818 (2001).

 

62. B. T. Lee, S. Y. Jung, Jong-Lam Lee, Y. J. Park , M. C. Paek, and K. I. Cho, “Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H2/Ar inductively coupled plasma,” Semiconductor Science Technology, Vol. 16 No. 6, p.471~473 (2001).

 

61. K. J. Choi and Jong-Lam Lee, “Effects of hot electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors,” Journal of Electronic Materials, Vol. 30, No. 7, p. 885~890 (2001).

 

60. J. K. Kim, Y. H. Cho, J. Lee, Y. Park, T. Kim, and Jong-Lam Lee, "The Effects of Au Overlayer on the Thermal Stability of Pt Ohmic Contact on P-type GaN," Journal of Korean Physical Society, Vol. 39, No. 1, p.23~27 (2001).

 

59. Jong-Lam Lee, M. H. Weber,  J. K. Kim, and K. G. Lynn, "Positron annihilation study of Pd contacts on impurity-doped GaN," Applied Physics Letters, Vol. 78, No. 26, p.4142~4144 (2001).

 

58. K. J. Choi and Jong-Lam Lee, “Surface states on n-type Al0.24Ga0.76As characterized by deep level transient spectroscopy,” Journal of Vacuum Science and Technology B, Vol. 19 No. 3, p. 615~621 (2001).

 

57. C. C. Kim, J. K. Kim, Jong-Lam Lee, J. H. Je, M. S. Yi, D. Y. Noh, Y. Hwu, P. Ruterana, “Catalytic role of Au in Ni/Au contact on GaN(0001),” Applied Physics Letters, Vol. 78, No. 24, p.3773~3775 (2001).

 

56. H. W. Jang, C. M. Jeon, J. K. Kim and Jong-Lam Lee, “Room-temperature ohmic contact on n-type GaN with surface treatment using Cl2 inductively-coupled plasma,” Applied Physics Letters, Vol. 78, No. 14, p. 2015-2017 (2001).

 

55. J. K. Kim, C. C. Kim, T. S. Cho, J. H. Je, Y. J. Park, Jong-Lam Lee, “Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN,” Journal of Electronic Materials, Vol. 30, No.3, p.170~174 (2001).

 

54. H. W. Jang, C. M. Jeon, J. K. Kim and Jong-Lam Lee, “Room Temperature Ohmic contact on n-type GaN using plasma treatment,” Internet Journal of Nitride Semiconductor, Vol. 6, No.8, p. 2015~2017 (2001).

 

53. J. K. Kim, K. J. Kim, B. Kim, J. N. Kim, J.S. Kwak, Y. J. Park, Jong-Lam Lee, “Effects of surface treatments using aqua regia solution on the change of surface band bending of  p-type GaN,” Journal of Electronic Materials, Vol. 30, No.3, p. 129~133 (2001).

 

52. Jong-Lam Lee, Y. T. Kim, J. W. Oh, B. T. Lee, “AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact,” Japanese Journal of Applied Physics, Vol. 40, No. 3A, p. 1188~1193 (2001).

 

51. K. J. Choi and Jong-Lam Lee, “Interpretation of Transconductance Dispersion in GaAs MESFET using Deep Level Transient Spectroscopy,” IEEE Transactions on Electron Devices, Vol. 48, No. 2, p.190~195 (2001).

 

50. C. C. Kim, J. K. Kim, Jong-Lam Lee, J. H. Je, M.-S. Yi, D. Y. Noh, Y. Hwu, P. Ruterana, “High-temperature structural behavior of Ni/Au contact on GaN (0001),” Internet Journal of Nitride Semiconductor, Vol. 6,  No.4 (2001).

 

49. J. K. Kim, J. H. Je, Y. J. Park, J. W. Lee, T. I. Kim, I. O. Jung, B. T. Lee, Jong-Lam Lee, “Microstructural and electrical investigation of Ni/Au Ohmic contact on p-type GaN,” Journal of Electronic Materials, Vol. 30, No. 2, p. L8~L12 (2001).

 

48. H. J. Ryu, Jong-Lam Lee, and J. H. Je, "Near perfect heteroepitaxy of diamond islands on Si(111),” Chemical Vapor Deposition, WILEY-VCH Verlag GmbH, Vol. 7, No. 1, p. 22~24 (2001).

 

47. H. J. Ryu, Jong-Lam. Lee, and J. H. Je, “UV laser photodeposition of nanotextured poly(hydridomethylsiloxane) powder from gaseous 1,3-dimethyldisiloxane” Advanced Materials, Vol.13, No.2, p22~24 (2001)

 

46. Jong-Lam Lee, E. A. Moon, J. W. Oh, S. W. Ryu, H. M. Yoo, “Selective Wet Etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT,” IEE Electronics Letters, Vol. 36, No. 23, p. 1974~ 1975 (2000).

 

45. Brickey, M.R, Jong-Lam Lee, “Structural and chemical analyses of a thermally grown oxide scale in thermal barrier coatings containing a platinum-nickel-aluminide bondcoat”, Oxidation of Metals, Vol54, No.3 pp.237-254 (2000)   

 

44. J. K. Kim, J. H. Je, Y. J. Park, B. T. Lee, Jong-Lam Lee,  “Micorstructural investigation of Ni/Au ohmic contact on p-type GaN,” Journal of The Electrochemical Society, Vol. 147, No.12, p.4645~4651 (2000).

 

43. S. I. Park, T. S. Cho, S. J. Doh, Jong-Lam Lee, and J. H. Je, "Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real-time synchrotron x-ray scattering," Applied Physics Letters , Vol. 77, No.3, p.349-351(2000),

 

42. S. Y. Han, J. K. Kim, Jong-Lam Lee, Y.-J. Baik, “Pretreatment effects by aqua-regia solution on field emission of diamond film,” Applied Physics Letters, Vol. 76, No. 25, p. 3694~3696 (2000).

 

41. Y.Ma, Jong-Lam Lee, M.S.Carroll, K.H. Lee, “High performance sub-0.25um devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition”, IEEE electron device letter, Vol.21, No.6, pp316-318

 

40. Jong-Lam Lee and J. K. Kim, “Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaN,” Journal of The Electrochemical Society, Vol. 147, No. 6, p.2297~2302 (2000).

 

39.  Jong-Lam Lee, J. K. Kim, K. J. Choi, and H. M. Yoo, "3.3V Supply Single-Voltage-Operating Double-Planar-Doped AlGaAs/InGaAs PHEMT with Double Channel for 1.6 GHz Digital Mobile Communications,” IEE Electronics Letters, Vol. 36, No. 3, p. 262-264  (2000).

 

38. Jong-Lam Lee, S. P. Oh, S. Y. Han, S. Y. Kang, J. H. Lee, K. I. Cho, “The effect of Pd coating on electron emission from silicon field emitter arrays,” Journal of Applied Physics, Vol. 97, No. 7, p. 7349~7353 (2000).

 

37. M.R.Brickey, Jong-Lam Lee, “New technique for successful thermal barrier coating specimen preparation for transmission electron microscopy” Microsocpy and Microanalysis Vol.6 No3. Pp231-236 (2000)  

 

36. Jong-Lam Lee, J. K. Kim, J. W. Lee, Y. J. Park and T. Kim, “Transparent Pt Ohmic contact on p-type GaN with low resistivity using (NH4)2Sx treatment,” Electrochemical and Solid-State Letters, Vol. 3,No. 1, p.53-55 (2000).

 

35. K. J. Choi and Jong-Lam Lee, “Determination of energy levels of surface states in GaAs-metal-semiconductor field-effect transistor using deep-level transient spectroscopy,” Applied Physics Letters, Vol. 74, No. 8, p. 1108~1110 (1999).

 

34. J.-W. Oh and Jong-Lam Lee, “Application of nonalloyed PdGe Ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor,” Applied Physics Letters, Vol. 74,No. 19, p.2866~2868 (1999).

 

33. K. J. Choi, Jong-Lam Lee, H. M. Yoo, “Effects of deep levels on transconductance Dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor,” Applied Physics Letters, Vol. 75, No. 11, p. 1580~1582 (1999).

 

32. Jong-Lam Lee, M. Weber, J. K. Kim, J. W. Lee, Y. J. Park and T. Kim, K. Lynn, “Ohmic contact formation mechanism of non-alloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy,” Applied Physics Letters, Vol. 74, No. 16, p. 2289~2291 (1999).

 

31. Jong-Lam Lee, “Sulfur doping of GaAs with (NH4)2Sx solution,” Journal of Applied Physics, Vol. 85, No. 2, p. 807~811 (1999).

 

30. J. K. Kim, Jong-Lam Lee, J. W. Lee, Y. J. Park and T. Kim, “The Effect of An Overlayer on Ni Contacts to p-type GaN,” Journal of Vacuum Science and Technology B, Vol. 17, No. 6, pp. 2675~2678 (1999)

 

29. Jong-Lam Lee, J. K. Kim, J. W. Lee, Y. J. Park and T. Kim, “Low Transparent Pt Ohmic Contact on p-type GaN by Surface Treatment using Aqua Regia,” IEE Electronics Letters, Vol. 35, No. 19, pp. 1676~1678

 

28. Jong-Lam Lee, Y. T. Kim, H. M. Yoo, and G. Y. Lee, “Au/Ge-based Ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with undoped cap layer,” Journal of Vacuum Science and Technology B, Vol. 17, No.3, pp. 1034~1039 (1999)

 

27. J. K. Kim, Jong-Lam Lee, J. W. Lee, Y. J. Park and T. Kim, “Effect of surface treatment by (NH4)2Sx solution on the reduction of ohmic contact resistivity of p-type GaN,” Journal of Vacuum Science and Technology B, Vol. 17, No. 2, pp. 497~499 (1999)

 

26. Jong-Lam Lee, J. K. Kim, J. W. Lee, Y. J. Park and T. Kim, “Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN,” Solid-State Electronics, Vol. 43, No. 2, pp. 435~438 (1999)

 

25. Jong-Lam Lee and Y. T. Kim, “Evidence on the formation of a heavily Ge-doped layer in Pd/Ge-based ohmic contact to pseudomorphic high electron mobility transistor,” Applied Physics Letters, Vol. 73, No. 22, pp. 3247~3249 (1998)

 

24. J. K. Kim, Jong-Lam Lee, J. W. Lee, H. E. Shin, Y. J. Park and T. Kim, “Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment,” Applied Physics Letters, Vol. 73, No. 20, pp. 2953~2955 (1998)

 

23. Jong-Lam Lee, Y. T. Kim, and J. Y. Lee, “Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer,” Applied Physics Letters, Vol. 73, No. 12, pp. 1670~1672, (1998)

 

22. J. S. Kwak, Jong-Lam Lee and H. K. Baik, “Improved Uniformity of Contact Resistance in GaAs MESFET using Pd/Ge/Ti/Au Ohmic Contacts,” IEEE Electron Device Letters, Vol. 19, No. 12, pp.481~483 (1998)

 

21. E. A Moon, Jong-Lam Lee, and H. M. Yoo, “Selective wet etching of GaAs on AlxGa1-xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor,” Journal of Applied Physics, Vol. 84, No. 7, pp. 3933~3938 (1998)

 

20. Jong-Lam Lee and Y. T. Kim, “Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistor,” Journal of Vacuum Science and Technology B, Vol. 16, No. 5, pp.2725~2728 (1998)

 

19. Jong-Lam Lee and K. J. Choi, “GaAs MESFET Fabrication Using a Novel (NH4)2Sx Solution Sulphur Diffusion Technique," IEE Electronics Letters, Vol. 34, No. 11, pp. 1152~1153 (1998)

 

18. Jong-Lam Lee, J. K. Mun, H. Kim, “A New Self-aligned and T-shaped Gate Technology for GaAs Power MESFET’s,” Solid-State Electronics, Vol. 42, No. 11, pp. 2063~2068 (1998)

 

17. Y. T. Kim, Jong-Lam Lee, B. T. Lee, “Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layer,” Journal of Applied Physics, Vol. 84, No 2, pp. 911~917 (1998)

 

16. Jong-Lam Lee, H. Kim, J. K. Mun, and S. J. Maeng, “A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications,” IEEE Electron Device Letters, Vol. 19, No. 7, pp.250~252 (1998)

 

15. Jong-Lam Lee and S. Tanigawa, “Application of slow positron beam to PdGe ohmic contact on GaAs,” Japanese Journal of Applied Physics, Vol. 37, No. 6A, pp. 3252~3256 (1998).

 

14. J. K. Mun, Jong-Lam Lee, H. Kim, B. T. Lee, and K. E. Pyun, “Degradation mechanism of GaAs MESFETs,” Microelectronics and Reliability, Vol. 38, No. 1, pp. 171-178 (1998)

 

13. Y. T. Kim, Jong-Lam Lee, J. K. Mun, and H.Kim, “Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs PHEMT with undoped cap layer,” Applied Physics Letters, Vol. 71, No. 18 pp. 2656-2658 (1997)

 

12. Jong-Lam Lee, J. K. Mun, and B. T. Lee, “Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs,” Journal of Applied Physics, Vol. 82, No. 10, pp. 5011-5016 (1997).19971115

 

11. Jong-Lam Lee, Y. T. Kim, J. S. Kwak, H. K. Baik, A. Uedono, and S. Tanigawa, “Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs,” Journal of Applied Physics, Vol. 82, No. 11, pp. 5460-5464 (1997)

 

10. Jong-Lam Lee, H. M. Yoo, and G. Y. Lee, “Single-voltage-operation pseudomorphic HEMT with low current dissipation for portable power applications,” IEE Electronics Letters, Vol. 33, pp. 1909~1910 (1997)

 

9. J. S. Kwak, Jong-Lam Lee, and H. K. Baik, “Pd-Ge-Au based hybrid ohmic contacts to high-low doped GaAs field-effect transistor,” Japanese Journal of Applied Physics, Vol. 36, No. 9A, pp. 5451~5458 (1997)

 

8. M. G. Kang, S. H. Sa, H. H. Park, K. S. Suh, and Jong-Lam Lee, “Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)2Sx solution,” Materials Science and Engineering. B, Vol. 46, No. 1~3, pp. 65~68 (1997)

 

7. S. J. Maeng, J. K. Mun, M. G. Kim, and Jong-Lam Lee, “RF characteristics of GaAs power MESFET’s with superlattice buffer layer,” Journal of the Korean Physical Society, Vol. 30, pp. S117-S122, (1997).

 

6. M. G. Kang, H. H. Park, K. S. Suh, and Jong-Lam Lee, “Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx,” Thin Solid Films, Vol. 290-291, pp.328-333 (1996).

 

5. J. S. Kwak, H. K. Baik, Jong-Lam Lee, C. G. Park, H. Kim, and K. S. Suh, “A low-resistance Pd/Ge/Ti/Au ohmic contact to high-low doped GaAs field-effect transistor,” Thin Solid Films, Vol. 290-291, pp.497-502 (1996).

 

4. Jong-Lam Lee, H. Kim, J. K. Mun, J. J. Lee, and H. M. Park, "A 68% PAE, GaAs Power MESFET operating at 2.3V drain bias for low distortion power application," IEEE Transactions of Electron Devices, Vol. 43, No. 4, pp.519~526 (1996).

 

3. J. S. Kwak, H. N. Kim, H. K. Baik, Jong-Lam Lee, D. W. Shin, C. G. Park, H. Kim, and K.E. Pyun, "A microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs," Journal of Applied Physics, Vol. 80, No. 7, pp.3904~3909  (1996).

 

2. J. S. Kwak, Jong-Lam Lee, H. K. Baik, D. W. Shin, C. K. Park, and H.C Kim, “ Effect of penetration depth of electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs,” Japanese Journal of Applied Physics, Vol. 35, No 7, pp.3841~3844 (1996).

 

1. K. S Suh, Jong-Lam Lee, H. H. Park, C. H. Kim, J.J. Lee, and K.S. Nam, "Passivation Effect of (NH4)2Sx treatment on GaAs Surface before Photo-resist and O2-plasma Processes," Material Science and Engineering B, Vol. 37, pp.172~176 (1996).