[87] Jun-Ho Park,+ Myung-Joo Park,+ and Jang-Sik Lee*, "Dry writing highly conductive electrodes on papers by silver nanoparticle-graphene hybrid pencils," Nanoscale 9, 555-561 (2017) (+Equal contribution) Selected as 2017 Nanoscale HOT Article Collection

[88] Youngjun Park and Jang-Sik Lee*, "Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature," ACS Applied Materials & Interfaces 9, 6207−6212 (2017)

[89] Un-Bin Han, Donghwa Lee, and Jang-Sik Lee*, "Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films," NPG Asia Materials 9, e351 (2017)

[90] Bohee Hwang, Chungwan Gu, Donghwa Lee, and Jang-Sik Lee*, "Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory," Scientific Reports 7, 43794 (2017)

[91] Masoud Akbari,+ Min-Kyu Kim,+ Dongshin Kim, and Jang-Sik Lee*, "Reproducible and reliable resistive switching behaviors of AlOx/HfOx bilayer structures with Al electrode by atomic layer deposition," RSC Advances 7, 16704-16708 (2017) (+Equal contribution)

[92] Bohee Hwang and Jang-Sik Lee*, "Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air," Scientific Reports 7, 673 (2017)

[93] Myung-Joo Park and Jang-Sik Lee*, "Zeolitic-imidazole framework thin film-based flexible resistive switching memory," RSC Advances 7, 21045-21049 (2017)

[94] Bohee Hwang and Jang-Sik Lee*, "A strategy to design high-density nanoscale devices utilizing vapor-deposition of metal-halide perovskite materials," Advanced Materials 29, 170104  (2017)  Selected as inside front cover   

[95] Youngjun Park and Jang-Sik Lee*, "Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks based on Renewable Materials," ACS NANO, Just accepted manuscript (2017)

[96] Niloufar Raeis-Hosseini and Jang-Sik Lee*, (Review article) "Resistive switching memory using biomaterials," Journal of Electroceramics, Accepted for publication (2017)


[76] Ji-MIn Song and Jang-Sik Lee*, "Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth," Scientific Reports 6, 18967 (2016)

[77] Kyuhyun Park and Jang-Sik Lee*,"Flexible resistive switching memory with Ni/CuOx/Ni structure by electrochemical deposition process," Nanotechnology 27, 125203 (2016)

[78] Kyuhyun Park and Jang-Sik Lee*, "Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures," RSC Advances 6, 21736-21741 (2016)

[79] Masoud Akbari and Jang-Sik Lee*, "Control of resistive switching behaviors of solution-processed HfOx-based resistive switching memory devices by n-type doping," RSC Advances 6, 21917-21921 (2016)

[80] Kyuhyun Park and Jang-Sik Lee*, "Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching," Scientific Reports 6, 23069 (2016)

[81] Niloufar Raeis-Hosseini and Jang-Sik Lee*, "Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors," ACS Applied Materials & Interfaces 8, 7326-7332 (2016)

[82] Chungwan Gu and Jang-Sik Lee*, "Patterning of Amorphous-InGaZnO Thin-Film Transistors by Stamping of Surface-Modified Polydimethylsiloxane," RSC Advances 6, 43147-43151 (2016)

[83] Un-Bin Han and Jang-Sik Lee*, "Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory," Scientific Reports 6, 25537 (2016)

[84] Chungwan Gu and Jang-Sik Lee*, "Flexible Hybrid Organic-Inorganic Perovskite Memory," ACS NANO 10, 5413-5418 (2016)

[85] Un-Bin Han and Jang-Sik Lee*, "Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications," Scientific Reports 6, 28966 (2016)

[86] Min-Kyu Kim and Jang-Sik Lee*, "Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self Compliance," ACS Applied Materials & Interfaces 8, 32918–32924 (2016)


[73] Young-Su Park and Jang-Sik Lee*, "Design of an Efficient Charge-Trapping Layer with a Built-In Tunnel Barrier for  Reliable Organic Transistor Memory," Advanced Materials 27, 706-711 (2015)

[74] Niloufar Raeis Hosseini and Jang-Sik Lee*, "Resistive Swiching Memory Based on Bioinspired Natural Solid Polymer Electrolytes,"  ACS NANO 9, 419-426 (2015)

[75] Niloufar Raeis Hosseini and Jang-Sik Lee*, "Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes," Advanced Functional Materials 25, 5586-5592 (2015)
Selected as inside front cover



[71] Chaewon Kim, Ji-Min Song, Jang-Sik Lee* and Mi Jung Lee, "All-solution-processed nonvolatile flexible nano-floating gate memory devices," Nanotechnology 25, 014016 (2014).

[72] Saunguen Park, Sangchul Lee, Greg Mordi, Srikar Jandhyala, Min-Woo Ha, Jang-Sik Lee, Luigi Colombo, Robert M. Wallace, Byoung Hun Lee, Jiyoung Kim "Triangular-Pulse Measurement for hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors," IEEE Electron Device Letters 35, 277-279 (2014).


[68] Sangwook Kim, Jae Chul Park, Dae Hwan Kim, and Jang-Sik Lee*,"Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf-In-Zn-O Thin-Film Transistors," Jpn. J. Appl. Phys. 52, 041701 (2013).

[69] Jang-Sik Lee*, "Nonvolatile memory devices based on self-assembled nanocrystals," Physica E 51, 94-103 (2013).

[70] Hyunchul Kim, Changdeuck Bae, Hyun Suk Jung, Jang-Sik Lee, Hyunjung Shin, "Direct patterning of metal oxides by hard templates and atomic layer deposition," Intertnational Journal of Nanotechnology 10, 692-701 (2013).


[63] Si-Hoon Lyu and Jang-Sik Lee,* "Highly scalable resistive switching memory cells using
pore-size-controlled nanoporous alumina templates
," Journal of Materials Chemistry 22, 1852 (2012).

[64] Young-Su Park, Soo-Jin Kim, Si-Hoon Lyu, Byoung Hoon Lee, Myung Mo Sung, Jaegab Lee, and Jang-Sik Lee*, " Memory Effect of Low-temperature Processed ZnO Thin-film Transistors having Metallic Nanoparticles as Charge Trapping Elements," J. Nanosci. Nanotech., Vol. 12, 1344-1347, (2012).

[65] Jang-Sik Lee, Hyunchul Kim, Pil-Ryung Cha, Jiyoung Kim, and Hyunjung Shin," Size Effects on the Stabilization and Growth of Tetragonal ZrO2 Crystallites in Nanotubular Structure," J. Nanosci. Nanotech., Vol. 12, 3177-3180, (2012).

[66] Adila Rani, Ji-Min Song, Mi jung Lee, and Jang-Sik Lee*," Reduced graphene oxide based flexible organic charge trap memory devices ," Appl. Phys. Lett., 101, 233308 (2012).

[67] Mohammad Arifur Rahman, Hyunho Kim, Young Kyu Lee, Chiyoung Lee, Hosoek Nam, Jang-Sik Lee, Hoesup Soh, Jong-Kwon Lee, Eun-Gu Lee, and Jaegab Lee*," High Performance Flexible Organic Thin Film Transistors (OTFTs) with Octadecyltrichlorsilane/Al2O3/Poly(4-vinylphenol) Multilayer Insulators ," J. Nanosci. Nanotech., 12, 1348-1352, (2012).


[57] Jang-Sik Lee,* Yong-Mu Kim, Jeong-Hwa Kwon, Jae Sung Sim, Hyunjung Shin, Byeong-Hyeok Sohn, and Q. X. Jia,   Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons , Advanced Materials, Vol. 23, Issue 18, pp. 2064-2068 (2011).

[58] Seung Jae Baik, Koeng Su Lim, Wonsup Choi, Hyunjun Yoo, Jang-Sik Lee, and Hyunjung Shin,   Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy , Nanoscale, Vol. 3, Issue 6, pp. 2560-2565 (2011).

[59] Jang-Sik Lee,*  (Feature article) Progress in non-volatile memory devices based on nanostructured materials and nanofabrication , Journal of Materials Chemistry , Vol. 21, pp. 14097-14112 (2011).

[60] Soo-Jin Kim, Ji-Min Song, and Jang-Sik Lee*,   Transparent organic thin-film transistors and nonvolatile memory devices fabricated on flexible plastic substrates , Journal of Materials Chemistry, Vol. 21, pp. 14516-14522 (2011).

[61] Jang-Sik Lee,*   Review Paper: Nano-Floating Gate Memory Devices , Electronic Materials Letters, 7(3), 175-183 (2011).

[62] Jaeman Jang, Jae Chul Park, Dongsik Kong, Dong Myong Kim, Jang-Sik Lee, Byeong-Hyeok Sohn, Il Hwan Cho, and Dae Hwan Kim,   Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer , IEEE Trans. Electron Dev., 58(11), 3940-3947 (2011).


[48] Soo-Jin Kim, Young-Su Park, Si-Hoon Lyu, and Jang-Sik Lee,*   Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers , Appl. Phys. Lett., January 22, 2010; Vol. 96, Article no. 033302.

[49] Yong-Mu Kim, Young-Su Park, Andrew O'Reilly, Jang-Sik Lee,*   Organic field-effect transistor-based nonvolatile memory devices having controlled metallic nanoparticle/polymer composite layers , Electrochem. Solid-State Lett., February 1, 2010; Vol. 13, pp. H134-H136.

[50] Changdeuck Bae, Dongjo Kim, Sunmi Moon, Taeyoung Choi, Youngmin Kim, Bo Sung Kim, Jang-Sik Lee, Hyunjung Shin, and Jooho Moon,   Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors ,  ACS Applied Materials & Interfaces, February 26, 2010; Vol. 2, pp. 626-632.

[51] Yong-Mu Kim, Soo-Jin Kim, Jang-Sik Lee,*   Organic Transistor-based Nano-Floating Gate Memory Devices having Multi-Stack Charge Trapping Layers , IEEE Electron Device Lett., Vol. 31, Issue 5, pp. 503-505 (2010).

[52] Young-Su Park, Seungjun Chung, Soo-Jin Kim, Si-Hoon Lyu, Jae-Wan Jang, Soon-Ki Kwon, Yongtaek Hong, and Jang-Sik Lee,*   High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors , Appl. Phys. Lett., May 25, 2010; Vol. 96, Article no. 213107.  

[53] Soo-Jin Kim and Jang-Sik Lee,* Flexible Organic Transistor Memory Devices , Nano Letters, Vol. 10, No. 8, pp. 2884-2890 (2010).

[54] Jang-Sik Lee,* Recent progress in gold nanoparticle-based non-volatile memory devices , Gold Bulletin, Vol. 43, No. 3, pp. 189-199 (2010).

[55] Young-Su Park, Sang Yeol Lee, and Jang-Sik Lee,* Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs , IEEE Electron Device Lett., Vol. 31, Issue 10, pp. 1134-1136 (2010).

[56] Jae Chul Park, Sangwook Kim, Sunil Kim, Changjung Kim, Ihun Song, Youngsoo Park, U-In Jung, Dae Hwan Kim, and Jang-Sik Lee*,   Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors having Double-Stacked Active Layers , Advanced Materials, Vol. 22, Issue 48, pp. 5512-5516 (2010)


[44] Jang-Sik Lee,* Yong-Mu Kim, Jeong-Hwa Kwon, Hyunjung Shin, Byeong-Hyeok Sohn, and Jaegab Lee,   Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer , Advanced Materials, January 12, 2009; Vol. 21, pp. 178-183.

[45] Jang-Sik Lee,* Min-Sun Kim, Dongjo Kim, Yong-Mu Kim, Jooho Moon, and Seung-Ki Joo,   Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization ,  Appl. Phys. Lett., March 23, 2009; Vol. 94, Article no. 122105.

[46] Heejung Park, Ara Kim, Chiyoung Lee, Jang-Sik Lee, and Jaegab Lee,   Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications , Appl. Phys. Lett., May 27, 2009; Vol. 94, Article no. 213508.

[47] Jaeman Jang, Changmin Choi, Jang-Sik Lee, Kyeong-Sik Min, Jaegab Lee, Dong Myong Kim, and Dae Hwan Kim,   Design of gate stacks for improved program/erase speed, retention and process margin aiming next generation metal nanocrystal memories ,  Semiconductor Science and Technology, November 2, 2009; Vol. 24, Article no. 114009.


[42] Yong-Mu Kim and Jang-Sik Lee*,   Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices ,  Appl. Phys. Lett., March 10 2008; Vol. 92, Article no. 102901.

[43] Yong-Mu Kim and Jang-Sik Lee*,   Reproducible resistance switching characteristics of hafnium oxide-based non-volatile memory devices , J. Appl. Phys., December 15, 2008; Vol. 104, Article no. 114115.


[36] Jang-Sik Lee*, Jung-Kun Lee, Seung-Ki Joo, ¡E?¢?¨¡ Precise control of phase transformation process in lead zirconate titanate thin films by focused line-beam scanning ,¡E?¢?¨u Appl. Phys. Lett., March 26 2007; Vol. 90, Article no. 132908.

[37] Han, S.-H.; Kang, I.-S.; Song, N.-K.; Kim, M.-S.; Lee, Jang-Sik*; Joo, S.-K, ¡E?¢?¨¡ The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing ,¡E?¢?¨u IEEE Trans. Electron Devices, September 2007, Vol. 54, No. 9, pp. 2546-2550.

[38] Hyunjung Shin, Chanhyung Kim, Changdeuck Bae, Jang-Sik Lee, Jaegab Lee and Sunghan Kim, ¡E?¢?¨¡ Effects of ion damage on the surface of ITO films during plasma treatment ,¡E?¢?¨u Applied Surface Science, September 15, 2007, Vol. 253, Issue 22, pp. 8928-8932.

[39] Jang-Sik Lee*, B. S. Kang, and Q. X. Jia, ¡E?¢?¨¡ Data retention characteristics of Bi 3.25 La 0.75 Ti 3 O 12 thin films on conductive SrRuO 3 electrodes ,¡E?¢?¨u Appl. Phys. Lett., October 1 2007; Vol. 91, Article no. 142901.

[40] Chiyoung Lee, Jeong-Hwa Kwon, Jang-Sik Lee*, Yong-Mu Kim, Yoojung Choi, Hyunjung Shin, Byeong-Hyeok Sohn, and Jaegab Lee, ¡E?¢?¨¡ Nonvolatile nanocrystal charge trap flash memory devices using a micellar route to ordered arrays of cobalt nanocrystals ,¡E?¢?¨u Appl. Phys. Lett., October 9 2007; Vol. 91, Article no. 153506.

[41] Jang-Sik Lee*, J. CHO, C. LEE, I. KIM, J. PARK, Y.-M. KIM, H. SHIN, J. LEE and F. CARUSO,   Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties ,  Nature Nanotechnology, December 2, 2007; Vol. 2, pp. 790-795.


[30] Hong Seong Kang, Sung Hoon Lim, Jae Won Kim, Hyun Woo Chang, Gun Hee Kim, Jong-Hoon Kim, Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. A. Nastasi, S. A. Crooker and Q. X. Jia, ¡E?¢?¨¡ Exciton localization and Stokes¡E?? shift in Zn 1-x Cd x O thin films depending on chemical composition ,¡E?¢?¨u J. Crystal Growth, Jan. 18 2006; Vol. 287, No. 1, pp. 70-73.

[31] Min-Sun Kim, Jang-Sik Lee, Young-Su Kim, and Seung-Ki Joo, ¡E?¢?¨¡ The Effects of Crystal Filter on Growth of Silicon Grains in Metal-Induced Lateral Crystallization ,¡E?¢?¨u Electrochemical and Solid-State Letters, Feb. 1 2006; Vol. 9, No. 2, pp. G56-G58.

[32] Hong Seong Kang, Jae Won Kim, Jong Hoon Kim, Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. A. Nastasi, S. A. Crooker, and Q. X. Jia, ¡E?¢?¨¡ Optical property and Stokes' shift of Zn 1-x Cd x O thin films depending on Cd content ,¡E?¢?¨u J. Appl. Phys., March 15, 2006; Vol. 99, Article no. 066113.

[33] Jang-Sik Lee*, Chang-Seok Kang, Yoo-Cheol Shin, Chang-Hyun Lee, Ki-Tae Park, Jong-Sun Sel, Viena Kim, Byeong-In Choe, Jae-Sung Sim, Jungdal Choi, and Kinam Kim, ¡E?¢?¨¡ Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work Function Metal-Gates for Multi-Gigabit Flash Memory ,¡E?¢?¨u Jpn. J. Appl. Phys., April 2006; vol. 45, no. 4B, pp. 3213-3216.

[34] J.-K. Lee, R. E. Muenchausen, Jang-Sik Lee, Q. X. Jia, M. Nastasi, J. A. Valdez, B. L. Bennett, D. W. Cooke, Sang Yeol Lee, ¡E?¢?¨¡ Structure and optical properties of Lu 2 SiO 5 :Ce phosphor thin films ,¡E?¢?¨u Appl. Phys. Lett., September 5 2006; Vol. 89, Article no. 101905.

[35] Min-Sun Kim, Nam-Kyu Song, Shin-Hee Han, Seung-Ki Joo, Jang-Sik Lee*,   Improvement of the electrical performance in metal-induced laterally crystallized polycrystalline silicon thin-film transistors by crystal filtering ,  Appl. Phys. Lett., December 4 2006; Vol. 89, Article no. 233503.


[26] Tuson Park, Z. Nussinov, K. R. A. Hazzard, V. A. Sidorov, A. V. Balatsky, J. L. Sarrao, S.-W. Cheong, M. F. Hundley, Jang-Sik Lee, Q. X. Jia, J. D. Thompson, ¡E?¢?¨¡ Novel Dielectric Anomaly in the Hole-Doped La2Cu1-xLixO4 and La2-xSrxNiO4 Insulators: Signature of an Electronic Glassy State ,¡E?¢?¨u Phys. Rev. Lett., Jan. 12 2005; Vol. 94, Article no. 017002.

[27] B. S. Kang, Jang-Sik Lee, L. Stan, L. Civale, R. F. DePaula, P. N. Arendt, and Q. X. Jia, ¡E?¢?¨¡ Ferromagnetic properties of epitaxial SrRuO3 films on SiO2/Si using bi-axially oriented MgO as templates ,¡E?¢?¨u Appl. Phys. Lett, Feb. 14 2005; Vol. 86, pp. 072511-072513.

[28] Y. Lin, X. Chen, S. W. Liu, C. L. Chen, Jang-Sik Lee, Y. Li, Q. X. Jia, and A. Bhalla, ¡E?¢?¨¡ Epitaxial nature and anisotropic dielectric properties of (Pb,Sr)TiO3 thin films on NdGaO3 substrates ,¡E?¢?¨u Appl. Phys. Lett., April 4 2005; Vol. 86, pp. 142902-142904.

[29] Min-Sun Kim, Jang-Sik Lee, Young-Su Kim and Seung-Ki Joo, ¡E?¢?¨¡Control of the Crystal Orientation in Metal-Induced Lateral Crystallization,¡E?¢?¨u J. Korean Phys. Soc., Nov. 2005; v.47, no.93, pp. S404~S407.


[17] Y. Lin, X. Chen, S. W. Liu, C. L. Chen, Jang-Sik Lee, Y. Li, Q. X. Jia, and A. Bhalla,   Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO3 thin films on NdGaO3 substrates ,  Appl. Phys. Lett., 26 Jan. 2004; vol.84, no.4, p.577-9.

[18] Jang-Sik Lee*, Q. X. Jia, Jung-Ho Park, Seung-Ki Joo, Woo Seok Yang, Nam Kyeong Kim, Seung Jin Yeom, and Jae Sung Roh,  Effect of Low-Energy Accelerated Ion Bombardment on the Properties of Metal-Organic Decomposition Derived SrBi2(Ta,Nb)2O9 Thin Films Processed at Low Temperature, J. Am. Ceram. Soc., APR 2004; v.87, no.4, p.720-723.

[19] Jang-Sik Lee*, Y. Li, Y. Lin, S. Y. Lee, and Q. X. Jia,   Hydrogen-induced degradation in epitaxial and polycrystalline BST thin films , Appl. Phys. Lett., 10 May 2004; vol.84, no.19, p.3825-7.

[20] Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. A. Nastasi, S. A. Crooker, Q. X. Jia, Hong-Seong Kang, and Jeong-Seok Kang, ¡E?¢?¨¡ Effects of chemical composition on the optical properties of Zn1-xCdxO thin films ,¡E?¢?¨u Appl. Phys. Lett., JUL 12 2004; v.85, no.2, p.218-220.

[21] Shin-Hee Han, Won-Cheol Jeong, Jang-Sik Lee*, Byung-Dong Kim, and Seung-Ki Joo, ¡E?¢?¨¡Formation of tunnel barrier using a pseudo-atomic layer deposition method and its application to spin-dependent tunneling junction ,¡E?¢?¨u Appl. Phys. A-Mater. Sci. Process, August 2004; v.81, no.3, p611-615.

[22] Jang-Sik Lee*, B. S. Kang, Y. Lin, Y. Li, and Q. X. Jia,   Anisotropic dielectric properties of Bi3.25La0.75Ti3O12 thin films with different crystalline directions , Appl. Phys. Lett., Sep. 27 2004; Vol. 85, No. 13, pp. 2586-2588.

[23] B. S. Kang, Jang-Sik Lee, L. Stan, J.-K. Lee, R. F. DePaula, P. N. Arendt, M. A. Nastasi, and Q. X. Jia, ¡E?¢?¨¡ Dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films on SiO2/Si using bi-axially oriented ion-beam-assisted-deposited MgO as templates ,¡E?¢?¨u Appl. Phys. Lett., Nov. 15 2004; Vol. 85, No. 20, pp. 4702-4704.

[24] Y. Lin, Jang-Sik Lee, H. Wang, Y. Li, S. R. Foltyn, Q. X. Jia, G. E. Collis, A. K. Burrell, and T. M. McCleskey, ¡E?¢?¨¡ Structure and dielectric properties of epitaxial Ba1-xSrxTiO3 films grown on LaAlO3 substrates by polymer-assisted deposition ,¡E?¢?¨u Appl. Phys. Lett., Nov. 22 2004; Vol. 85, No. 21, pp. 4007-4009.

[25] Xiaoding Qi, Joonghoe Dho, Mark Blamire, Quanxi Jia, Jang-Sik Lee, Steve Foltyn, and Judith L. MacManus-Driscoll, ¡E?¢?¨¡ Epitaxial growth of BiFeO3 thin films by LPE and sol-gel methods ,¡E?¢?¨u J. Magnetism and Magnetic Materials, December 2004, Vol. 283, Issue 2-3, pp. 415-421.


[14] Jang-Sik Lee*, S. Y. Lee, and Q. X. Jia,  Lateral epitaxial growth of Ba0.6Sr0.4TiO3 thin films, Integrated Ferroelectrics, 2003; vol.55, p.933-8.

[15] P. Lu, Jang-Sik Lee, and Q. X. Jia,  Microstructural Properties of Ba0.6Sr0.4TiO3/RuO2 Multi-Layers Grown on MgO and YSZ by Pulsed-Laser Deposition,  Integrated Ferroelectrics, 2003; vol.55, p.965-72.

[16] Jang-Sik Lee*, H. Wang, S. Y. Lee, S. R. Foltyn, and Q. X. Jia,  Lateral epitaxial growth of (Ba,Sr)TiO3 thin films, Appl. Phys. Lett., 29 Dec. 2003; vol.83, no.26, p.5494-6.


 [9] Jang-Sik Lee* and Seung-Ki Joo,  Self-limiting behavior of the grain growth in lead zirconate titanate thin films, J. Appl. Phys., SEP 1 2002; v.92, no.5, p.2658-2662.

[10] Jang-Sik Lee* and Seung-Ki Joo,  The role of grain-boundary on the hydrogen-induced degradation in thin-film ferroelectric capacitors,  IEEE Electron Device Letters, SEP 2002; v.23, no.9, p.517-519.

[11] Jang-Sik Lee* and Seung-Ki Joo,  Analysis of grain-boundary effects on the electrical properties of lead zirconate titanate thin films, Appl. Phys. Lett., SEP 30 2002; v.81, no.14, p.2602-2604.

[12] Jang-Sik Lee* and Seung-Ki Joo,  The Problem Originating from the Grain Boundaries in Dielectric Storage Capacitors, Solid-State Electronics, OCT 2002; v.46, no.10, p.1651-1657.

[13] Jang-Sik Lee* and Seung-Ki Joo,  Role of grain boundaries on the hydrogen-induced degradation in lead zirconate titanate thin films,  Appl. Phys. Lett., 21 Oct. 2002; vol .81, no.17, p.3230-2.


 [5] Jang-Sik Lee* and Seung-Ki Joo,  Enhanced fatigue and data retention characteristics of lead zirconate titanate thin films by selectively nucleated lateral crystallization,  Jpn. J. Appl. Phys., JAN 2001; v.40, no.1, p.229-233.

 [6] Chang-Wook Jeong, Jang-Sik Lee, and Seung-Ki Joo,  Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films,  Jpn. J. Appl. Phys., JAN 2001; v.40, no.1, p.285-289.

 [7] Jang-Sik Lee*, Jung-Ho Park, Jong-In Yun, Chan-Soo Kim, and Seung-Ki Joo,  Fatigue and data retention characteristics of the single-grained Pb(Zr,Ti)O3 thin films, J. Korean Phys. Soc., JUL 2001; v.39, no.1, p.184-188.

 [8] Jung-Ho Park; Jang-Sik Lee; and Seung-Ki Joo,  MFIS and MFMIS structures using Pb(Zr,Ti)O3 films for nonvolatile memory devices,  Integrated Ferroelectrics, 2001; v.40, no.1-5, p.1579-1588.


 [2] Jang-Sik Lee* and Seung-Ki Joo,  Introduction of selective nucleated lateral crystallization of lead zirconate titanate thin films for fabrication of high-performance ferroelectric random access memory, Jpn. J. Appl. Phys., NOV 2000; v.39, no.11, p.6343-6347.

 [3] Jang-Sik Lee*, Byung-Il Lee, and Seung-Ki Joo,  Single-grained PZT thin films for high level FRAM integration-fabrication and characterization, Integrated Ferroelectrics, 2000; v.31, no.1-4, p.149-162.

 [4] Eung-Chul Park, Jang-Sik Lee, Jung-Ho Park, Byung-Il Lee, and Seung-Ki Joo,  Effect of ion damage on the crystallization of PZT thin films,  Integrated Ferroelectrics, 2000; v.31, no.1-4, p.173-181.


 [1] Jang-Sik Lee*, Byung-Il Lee, and Seung-Ki Joo,  Effects of process parameters on structure and magnetic properties of sputtered Ni-Zn ferrite thin films, IEEE Transactions on Magnetics, SEP 1999; v.35, no.5, pt.2, p.3415-3417.