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1388822
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14.04.16
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1314
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제목 : [CiTE] 학과 세미나 안내 (김창현 부사장 / 삼성전기)

창의IT융합공학과에서 삼성전기의 김창현 부사장을 모시고 학과 세미나를 갖고자 하오니,
많은 분들의 참여 부탁드립니다.


 연사: 김창현 부사장 (삼성전기)

 주제: Sustainable & Innovative Great Company

 일시: 2014년 4월 17일(목) 16:00 ~ 17:30

 장소: 나노융합기술원 (NINT) 6층 창의공간
 초청자: 김재준 교수 (279-8861)



발표 내용:

In this talk, I will discuss the perspective of future industry in 21st century along with the history of IT revolution. I will also talk about two main requirements for the sustainable and innovative company: 1. how to train soft and creative minded people who can quickly adjust to the dynamic industry trend and 2. how to develop technology for profit while maintaining strong corporate social responsibilities.


약력:

C.H. Kim (IEEE Fellow ‘11) received a B.S. and an M.S. degree in electronics engineering from Seoul National University, Seoul, Korea, in 1982 and 1984, respectively, and a Ph.D. degree in electrical engineering from the University of Michigan, Ann Arbor, USA in 1994.


In 1984, he joined Samsung Electronics Co., Ltd., Gyeonggi-do, Korea, where he was involved in circuit design for high-speed dynamic RAM’s, ranging from 64Kb to 16Mb in size. From 1989 until 1995, he was a research assistant and research faculty with the center for Integrated Sensors and Circuits, university of Michigan, USA.


In 1995, he rejoined Samsung Electronics and worked on high density Gigabit commodity DRAM. His research interests were in the area of circuit design for low-voltage and high-performance Giga-scale DRAM (RDRAM & DDR1/2/3) and future high performance new DRAM architectures (DDR4, XDR, NMT, SBD, etc.), ranging from 1GHz to 10GHz in speed.


In 2004 he was selected with honor as a Samsung Group Fellow for his contribution in high performance DRAM development. From 2005 to 2009, he was in charge of the Advanced Technology Development team for future-generation memory developments including DRAM, NAND Flash, and all other new emerging memories (Phase-change RAM, resistive RAM, Magnetic RAM). In 2009, he became head of the memory product planning and application engineering team in order to promote and create new memory solution products in various application areas and to globally handle all technical problems related to memory in the fields.


In 2010, he moved to Samsung Electro-Mechanics (which produces all electronic and mechanical components and modules) as CTO, being in charge of the corporate R&D center and the manufacturing engineering institute. He was also a chief of the CDS (Circuit Drive Solution) business division, which mainly focuses on flat panel display power and wireless connectivity modules. Now he is working at corporate product planning department and plans new future electronics products of all business divisions.


He has been serving as a technical committee member/chair of several international conferences; Symposium on VLSI Circuits, Asian Solid State Circuits Conference, International Solid State Circuits Conference, and other annual domestic and Samsung conferences. He has published about 140 technical papers in semiconductor memory areas, received the Takuo Sugano awards for outstanding far-east paper several times, and has issued around 50 patents. He was nominated as an IEEE fellow in 2011.




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다음글 2014-1학기 제 4회 창의타임 안내
이전글 [CiTE] 4/16 창의세미나 안내 (조원배 박사/한국전자통신연구원)